Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQS423EN-T1_GE3

SQS423EN-T1_GE3

MOSFET P-CH 30V 16A PPAK1212-8

Vishay Siliconix
3,778 -

RFQ

SQS423EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 21mOhm @ 12A, 10V 2.5V @ 250µA 26 nC @ 4.5 V ±20V 1975 pF @ 15 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHFR9310-GE3

SIHFR9310-GE3

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
2,684 -

RFQ

SIHFR9310-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2314EDS-T1-GE3

SI2314EDS-T1-GE3

MOSFET N-CH 20V 3.77A SOT23-3

Vishay Siliconix
3,931 -

RFQ

SI2314EDS-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3.77A (Ta) 1.8V, 4.5V 33mOhm @ 5A, 4.5V 950mV @ 250µA 14 nC @ 4.5 V ±12V - - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2367DS-T1-GE3

SI2367DS-T1-GE3

MOSFET P-CH 20V 3.8A SOT23-3

Vishay Siliconix
8,185 -

RFQ

SI2367DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.8A (Tc) 1.8V, 4.5V 66mOhm @ 2.5A, 4.5V 1V @ 250µA 23 nC @ 8 V ±8V 561 pF @ 10 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1031R-T1-GE3

SI1031R-T1-GE3

MOSFET P-CH 20V 140MA SC75A

Vishay Siliconix
29,940 -

RFQ

SI1031R-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 140mA (Ta) 1.5V, 4.5V 8Ohm @ 150mA, 4.5V 1.2V @ 250µA 1.5 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISA96DN-T1-GE3

SISA96DN-T1-GE3

MOSFET N-CH 30V 16A PPAK1212-8

Vishay Siliconix
60,803 -

RFQ

SISA96DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 8.8mOhm @ 10A, 10V 2.2V @ 250µA 15 nC @ 4.5 V +20V, -16V 1385 pF @ 15 V - 26.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR172ADP-T1-GE3

SIR172ADP-T1-GE3

MOSFET N-CH 30V 24A PPAK SO-8

Vishay Siliconix
6,001 -

RFQ

SIR172ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.4V @ 250µA 44 nC @ 10 V ±20V 1515 pF @ 15 V - 29.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4778DY-T1-E3

SI4778DY-T1-E3

MOSFET N-CH 25V 8A 8SO

Vishay Siliconix
2,226 -

RFQ

SI4778DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 8A (Tc) 4.5V, 10V 23mOhm @ 7A, 10V 2.2V @ 250µA 18 nC @ 10 V ±16V 680 pF @ 13 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ7415AENW-T1_GE3

SQ7415AENW-T1_GE3

MOSFET P-CH 60V 16A PPAK1212-8

Vishay Siliconix
2,113 -

RFQ

SQ7415AENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 4.5V, 10V 65mOhm @ 5.7A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1385 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI1403BDL-T1-GE3

SI1403BDL-T1-GE3

MOSFET P-CH 20V 1.5A SC70-6

Vishay Siliconix
3,000 -

RFQ

SI1403BDL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 150mOhm @ 1.5A, 4.5V 1.3V @ 250µA 4.5 nC @ 4.5 V ±12V - - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8499DB-T2-E1

SI8499DB-T2-E1

MOSFET P-CH 20V 16A 6MICRO FOOT

Vishay Siliconix
4,740 -

RFQ

SI8499DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 1.8V, 4.5V 32mOhm @ 1.5A, 4.5V 1.3V @ 250µA 30 nC @ 5 V ±12V 1300 pF @ 10 V - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3447CDV-T1-E3

SI3447CDV-T1-E3

MOSFET P-CH 12V 7.8A 6TSOP

Vishay Siliconix
2,004 -

RFQ

SI3447CDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 7.8A (Tc) 4.5V 36mOhm @ 6.3A, 4.5V 1V @ 250µA 30 nC @ 8 V ±8V 910 pF @ 6 V - 2W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8416DB-T2-E1

SI8416DB-T2-E1

MOSFET N-CH 8V 16A 6MICRO FOOT

Vishay Siliconix
10,117 -

RFQ

SI8416DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 16A (Tc) 1.2V, 4.5V 23mOhm @ 1.5A, 4.5V 800mV @ 250µA 26 nC @ 4.5 V ±5V 1470 pF @ 4 V - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA108DJ-T1-GE3

SIA108DJ-T1-GE3

MOSFET N-CH 80V 6.6A/12A PPAK

Vishay Siliconix
3,142 -

RFQ

SIA108DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 6.6A (Ta), 12A (Tc) 7.5V, 10V 38mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 545 pF @ 40 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR320-GE3

SIHFR320-GE3

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
3,156 -

RFQ

SIHFR320-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR1N60ATR-GE3

SIHFR1N60ATR-GE3

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
3,318 -

RFQ

SIHFR1N60ATR-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR9024TR-GE3

SIHFR9024TR-GE3

MOSFET P-CH 60V 8.8A DPAK

Vishay Siliconix
2,738 -

RFQ

SIHFR9024TR-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA26DN-T1-GE3

SISA26DN-T1-GE3

MOSFET N-CH 25V 60A PPAK1212-8S

Vishay Siliconix
2,940 -

RFQ

SISA26DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.5V @ 250µA 44 nC @ 10 V +16V, -12V 2247 pF @ 10 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4800BDY-T1-E3

SI4800BDY-T1-E3

MOSFET N-CH 30V 6.5A 8SO

Vishay Siliconix
4,499 -

RFQ

SI4800BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 18.5mOhm @ 9A, 10V 1.8V @ 250µA 13 nC @ 5 V ±25V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4800BDY-T1-GE3

SI4800BDY-T1-GE3

MOSFET N-CH 30V 6.5A 8SO

Vishay Siliconix
2,500 -

RFQ

SI4800BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 18.5mOhm @ 9A, 10V 1.8V @ 250µA 13 nC @ 5 V ±25V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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