Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHD3N50DT1-GE3

SIHD3N50DT1-GE3

MOSFET N-CH 500V 3A DPAK

Vishay Siliconix
3,065 -

RFQ

SIHD3N50DT1-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 1.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR110PBF

IRFR110PBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
1,235 -

RFQ

IRFR110PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR440DP-T1-GE3

SIR440DP-T1-GE3

MOSFET N-CH 20V 60A PPAK SO-8

Vishay Siliconix
9,978 -

RFQ

SIR440DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.55mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 6000 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4124DY-T1-GE3

SI4124DY-T1-GE3

MOSFET N-CH 40V 20.5A 8SO

Vishay Siliconix
4,191 -

RFQ

SI4124DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20.5A (Tc) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3540 pF @ 20 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU120PBF

IRFU120PBF

MOSFET N-CH 100V 7.7A TO251AA

Vishay Siliconix
2,980 -

RFQ

IRFU120PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9014PBF

IRFR9014PBF

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
2,985 -

RFQ

IRFR9014PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR210PBF

IRFR210PBF

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix
2,970 -

RFQ

IRFR210PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9110PBF

IRFR9110PBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix
1,125 -

RFQ

IRFR9110PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFRC20PBF

IRFRC20PBF

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
7,305 -

RFQ

IRFRC20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL510PBF

IRL510PBF

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
680 -

RFQ

IRL510PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU214PBF

IRFU214PBF

MOSFET N-CH 250V 2.2A TO251AA

Vishay Siliconix
1,898 -

RFQ

IRFU214PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830ASTRLPBF

IRF830ASTRLPBF

MOSFET N-CH 500V 5A D2PAK

Vishay Siliconix
4,472 -

RFQ

IRF830ASTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420APBF

IRFR420APBF

MOSFET N-CH 500V 3.3A DPAK

Vishay Siliconix
4,050 -

RFQ

IRFR420APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7108DN-T1-E3

SI7108DN-T1-E3

MOSFET N-CH 20V 14A PPAK1212-8

Vishay Siliconix
2,739 -

RFQ

SI7108DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.9mOhm @ 22A, 10V 2V @ 250µA 30 nC @ 4.5 V ±16V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF830APBF

IRF830APBF

MOSFET N-CH 500V 5A TO220AB

Vishay Siliconix
7,518 -

RFQ

IRF830APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD020PBF

IRFD020PBF

MOSFET N-CH 50V 2.4A 4DIP

Vishay Siliconix
4,991 -

RFQ

IRFD020PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 2.4A (Tc) 10V 100mOhm @ 1.4A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9110PBF

IRFU9110PBF

MOSFET P-CH 100V 3.1A TO251AA

Vishay Siliconix
1,734 -

RFQ

IRFU9110PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ14SPBF

IRLZ14SPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
949 -

RFQ

IRLZ14SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHFR420A-GE3

SIHFR420A-GE3

MOSFET N-CH 500V 3.3A DPAK

Vishay Siliconix
2,403 -

RFQ

SIHFR420A-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 3400 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR420TRL-GE3

SIHFR420TRL-GE3

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
3,050 -

RFQ

SIHFR420TRL-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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