Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP33N60E-GE3

SIHP33N60E-GE3

MOSFET N-CH 600V 33A TO220AB

Vishay Siliconix
708 -

RFQ

SIHP33N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB35N60E-GE3

SIHB35N60E-GE3

MOSFET N-CH 650V 32A D2PAK

Vishay Siliconix
535 -

RFQ

SIHB35N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA66DN-T1-GE3

SISA66DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8

Vishay Siliconix
2,982 -

RFQ

SISA66DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.2V @ 1mA 66 nC @ 10 V +20V, -16V 3014 pF @ 15 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA66DP-T1-GE3

SIRA66DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,952 -

RFQ

SIRA66DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.2V @ 1mA 66 nC @ 10 V +20V, -16V - - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJA58ADP-T1-GE3

SIJA58ADP-T1-GE3

MOSFET N-CH 40V 32.3A/109A PPAK

Vishay Siliconix
3,815 -

RFQ

SIJA58ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 32.3A (Ta), 109A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 61 nC @ 10 V +20V, -16V 3030 pF @ 20 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF065N60E-GE3

SIHF065N60E-GE3

MOSFET N-CH 600V 40A TO220

Vishay Siliconix
287 -

RFQ

SIHF065N60E-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 2700 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFR430ATR-GE3

SIHFR430ATR-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix
3,401 -

RFQ

SIHFR430ATR-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR430ATRR-GE3

SIHFR430ATRR-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix
2,150 -

RFQ

SIHFR430ATRR-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR430ATRL-GE3

SIHFR430ATRL-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix
2,547 -

RFQ

SIHFR430ATRL-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP052N60EF-GE3

SIHP052N60EF-GE3

MOSFET EF SERIES TO-220AB

Vishay Siliconix
950 -

RFQ

SIHP052N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 52mOhm @ 23A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 3380 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG32N50D-GE3

SIHG32N50D-GE3

MOSFET N-CH 500V 30A TO247AC

Vishay Siliconix
397 -

RFQ

SIHG32N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 96 nC @ 10 V ±30V 2550 pF @ 100 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD23N06-31L_T4GE3

SQD23N06-31L_T4GE3

MOSFET N-CH 60V 23A TO252AA

Vishay Siliconix
3,105 -

RFQ

SQD23N06-31L_T4GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 2.5V @ 250µA 24 nC @ 10 V ±20V 845 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG065N60E-GE3

SIHG065N60E-GE3

MOSFET N-CH 600V 40A TO247AC

Vishay Siliconix
351 -

RFQ

SIHG065N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIJA58DP-T1-GE3

SIJA58DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
2,272 -

RFQ

SIJA58DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 75 nC @ 10 V +20V, -16V 3750 pF @ 20 V - 27.7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP32N50KPBF

IRFP32N50KPBF

MOSFET N-CH 500V 32A TO247-3

Vishay Siliconix
241 -

RFQ

IRFP32N50KPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 160mOhm @ 32A, 10V 5V @ 250µA 190 nC @ 10 V ±30V 5280 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQ3460EV-T1_GE3

SQ3460EV-T1_GE3

MOSFET N-CH 20V 8A 6TSOP

Vishay Siliconix
2,392 -

RFQ

SQ3460EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 30mOhm @ 5.1A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1060 pF @ 10 V - 3.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHW47N60E-GE3

SIHW47N60E-GE3

MOSFET N-CH 600V 47A TO247AD

Vishay Siliconix
287 -

RFQ

SIHW47N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP26N60LPBF

IRFP26N60LPBF

MOSFET N-CH 600V 26A TO247-3

Vishay Siliconix
1,986 -

RFQ

IRFP26N60LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 5020 pF @ 25 V - 470W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG100N60E-GE3

SIHG100N60E-GE3

MOSFET N-CH 600V 30A TO247AC

Vishay Siliconix
392 -

RFQ

SIHG100N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG039N60E-GE3

SIHG039N60E-GE3

MOSFET N-CH 600V 63A TO247AC

Vishay Siliconix
406 -

RFQ

SIHG039N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 63A (Tc) 10V 39mOhm @ 32A, 10V 5V @ 250µA 126 nC @ 10 V ±30V 4369 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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