Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU9210PBF

IRFU9210PBF

MOSFET P-CH 200V 1.9A TO251AA

Vishay Siliconix
2,789 -

RFQ

IRFU9210PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9310PBF

IRFR9310PBF

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
1,895 -

RFQ

IRFR9310PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF634PBF

IRF634PBF

MOSFET N-CH 250V 8.1A TO220AB

Vishay Siliconix
1,893 -

RFQ

IRF634PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU024PBF

IRFU024PBF

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
1,272 -

RFQ

IRFU024PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840APBF-BE3

IRF840APBF-BE3

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix
1,034 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4420BDY-T1-GE3

SI4420BDY-T1-GE3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix
2,067 -

RFQ

SI4420BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 3V @ 250µA 50 nC @ 10 V ±20V - - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJ860EP-T1_GE3

SQJ860EP-T1_GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
2,580 -

RFQ

SQJ860EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA88EP-T1_GE3

SQJA88EP-T1_GE3

MOSFET N-CH 40V 30A PPAK SO-8

Vishay Siliconix
2,692 -

RFQ

SQJA88EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 7mOhm @ 8A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840SPBF

IRF840SPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
1,205 -

RFQ

IRF840SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI730GPBF

IRFI730GPBF

MOSFET N-CH 400V 3.7A TO220-3

Vishay Siliconix
1,295 -

RFQ

IRFI730GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.7A (Tc) 10V 1Ohm @ 2.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640STRRPBF

IRF9640STRRPBF

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix
4,770 -

RFQ

IRF9640STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRRPBF

IRFS9N60ATRRPBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
1,600 -

RFQ

IRFS9N60ATRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL630SPBF

IRL630SPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,500 -

RFQ

IRL630SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB9N65APBF

IRFB9N65APBF

MOSFET N-CH 650V 8.5A TO220AB

Vishay Siliconix
2,510 -

RFQ

IRFB9N65APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 930mOhm @ 5.1A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1417 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJ464EP-T2_GE3

SQJ464EP-T2_GE3

MOSFET N-CH 60V 32A PPAK SO-8

Vishay Siliconix
3,284 -

RFQ

SQJ464EP-T2_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 4.5V, 10V 17mOhm @ 7.1A, 10V 2.5V @ 250µA 44 nC @ 10 V ±20V 2086 pF @ 30 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF530-GE3

SIHF530-GE3

MOSFET N-CH 100V 14A TO220AB

Vishay Siliconix
2,428 -

RFQ

SIHF530-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHA186N60EF-GE3

SIHA186N60EF-GE3

MOSFET N-CH 600V 8.4A TO220

Vishay Siliconix
2,000 -

RFQ

SIHA186N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC30GPBF

IRFIBC30GPBF

MOSFET N-CH 600V 2.5A TO220-3

Vishay Siliconix
4,084 -

RFQ

IRFIBC30GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 2.2Ohm @ 1.5A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI740GPBF

IRFI740GPBF

MOSFET N-CH 400V 5.4A TO220-3

Vishay Siliconix
1,686 -

RFQ

IRFI740GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.4A (Tc) 10V 550mOhm @ 3.2A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1370 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS11N50APBF

IRFS11N50APBF

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix
984 -

RFQ

IRFS11N50APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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