Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9640SPBF

IRF9640SPBF

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix
1,880 -

RFQ

IRF9640SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40PBF

IRFBC40PBF

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
2,589 -

RFQ

IRFBC40PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL540PBF

IRL540PBF

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix
1,885 -

RFQ

IRL540PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB11N50APBF

IRFB11N50APBF

MOSFET N-CH 500V 11A TO220AB

Vishay Siliconix
1,362 -

RFQ

IRFB11N50APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740APBF

IRF740APBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
1,224 -

RFQ

IRF740APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ44SPBF

IRFZ44SPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
983 -

RFQ

IRFZ44SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIZ34GPBF

IRFIZ34GPBF

MOSFET N-CH 60V 20A TO220-3

Vishay Siliconix
1,043 -

RFQ

IRFIZ34GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 50mOhm @ 12A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ44PBF

IRLZ44PBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
1,054 -

RFQ

IRLZ44PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF740LCPBF

IRF740LCPBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
278 -

RFQ

IRF740LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG20N50C-E3

SIHG20N50C-E3

MOSFET N-CH 500V 20A TO247AC

Vishay Siliconix
2,382 -

RFQ

SIHG20N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 10A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 2942 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9240PBF

IRFP9240PBF

MOSFET P-CH 200V 12A TO247-3

Vishay Siliconix
972 -

RFQ

IRFP9240PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI2316DS-T1-GE3

SI2316DS-T1-GE3

MOSFET N-CH 30V 2.9A SOT23-3

Vishay Siliconix
3,685 -

RFQ

SI2316DS-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4.5V, 10V 50mOhm @ 3.4A, 10V 800mV @ 250µA (Min) 7 nC @ 10 V ±20V 215 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHFR220-GE3

SIHFR220-GE3

MOSFET N-CH 200V 4.8A DPAK

Vishay Siliconix
2,894 -

RFQ

SIHFR220-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1002R-T1-GE3

SI1002R-T1-GE3

MOSFET N-CH 30V 610MA SC75A

Vishay Siliconix
3,810 -

RFQ

SI1002R-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 610mA (Ta) 1.5V, 4.5V 560mOhm @ 500mA, 4.5V 1V @ 250µA 2 nC @ 8 V ±8V 36 pF @ 15 V - 220mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1428EDH-T1-GE3

SI1428EDH-T1-GE3

MOSFET N-CHANNEL 30V 4A SC70-6

Vishay Siliconix
2,456 -

RFQ

SI1428EDH-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4A (Tc) 2.5V, 10V 45mOhm @ 3.7A, 10V 1.3V @ 250µA 13.5 nC @ 10 V ±12V - - 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5446DU-T1-GE3

SI5446DU-T1-GE3

MOSFET N-CH 30V 25A PPAK

Vishay Siliconix
2,850 -

RFQ

SI5446DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 6.4mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V +20V, -16V 1610 pF @ 15 V - 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP70042E-GE3

SUP70042E-GE3

N-CHANNEL 100 V (D-S) MOSFET TO-

Vishay Siliconix
434 -

RFQ

SUP70042E-GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6490 pF @ 50 V - 278W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP350PBF

IRFP350PBF

MOSFET N-CH 400V 16A TO247-3

Vishay Siliconix
2,029 -

RFQ

IRFP350PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

MOSFET N-CH 25V 20.1A/40A PPAK

Vishay Siliconix
3,263 -

RFQ

SIAA00DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 20.1A (Ta), 40A (Tc) 4.5V, 10V 5.6mOhm @ 15A, 10V 2.5V @ 250µA 24 nC @ 10 V +16V, -12V 1090 pF @ 12.5 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS496EDNT-T1-GE3

SIS496EDNT-T1-GE3

MOSFET N-CH 30V 50A PPAK1212-8

Vishay Siliconix
2,881 -

RFQ

SIS496EDNT-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1515 pF @ 15 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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