Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIS626DN-T1-GE3

SIS626DN-T1-GE3

MOSFET N-CH 25V 16A PPAK1212-8

Vishay Siliconix
3,856 -

RFQ

SIS626DN-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16A (Tc) 2.5V, 10V 9mOhm @ 10A, 10V 1.4V @ 250µA 60 nC @ 10 V ±12V 1925 pF @ 15 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS778DN-T1-GE3

SIS778DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,636 -

RFQ

SIS778DN-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 5mOhm @ 10A, 10V 2.2V @ 250µA 42.5 nC @ 10 V ±20V 1390 pF @ 15 V Schottky Diode (Body) 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SMM2348ES-T1-GE3

SMM2348ES-T1-GE3

MOSFET N-CH 30V 8A SOT23-3

Vishay Siliconix
3,611 -

RFQ

SMM2348ES-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 24mOhm @ 12A, 10V 2.5V @ 250µA 14.5 nC @ 10 V ±20V 540 pF @ 15 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM120N04-1M4L_GE3

SQM120N04-1M4L_GE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
2,146 -

RFQ

Tape & Reel (TR) - Obsolete - - - 120A (Tc) - - - - - - - - - -
SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3

MOSFET N-CH 60V 120A TO262-3

Vishay Siliconix
3,898 -

RFQ

SQV120N06-4M7L_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 8800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQV120N10-3M8_GE3

SQV120N10-3M8_GE3

MOSFET N-CH 100V 120A TO262-3

Vishay Siliconix
3,054 -

RFQ

SQV120N10-3M8_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.8mOhm @ 20A, 10V 3.5V @ 250µA 190 nC @ 10 V ±20V 7230 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUP45P03-09-GE3

SUP45P03-09-GE3

MOSFET P-CH 30V 45A TO220AB

Vishay Siliconix
3,576 -

RFQ

SUP45P03-09-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 8.7mOhm @ 20A, 10V 2.5V @ 250µA 90 nC @ 10 V ±20V 2700 pF @ 15 V - 73.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4833BDY-T1-GE3

SI4833BDY-T1-GE3

MOSFET P-CHANNEL 30V 4.6A 8SOIC

Vishay Siliconix
2,100 -

RFQ

SI4833BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Tc) 4.5V, 10V 68mOhm @ 3.6A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 350 pF @ 15 V Schottky Diode (Isolated) 2.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS612EDNT-T1-GE3

SIS612EDNT-T1-GE3

MOSFET N-CH 20V 50A PPAK1212-8S

Vishay Siliconix
3,951 -

RFQ

SIS612EDNT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 4.5V 3.9mOhm @ 14A, 4.5V 1.2V @ 1mA 70 nC @ 10 V ±12V 2060 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP054PBF

IRFP054PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix
3,479 -

RFQ

IRFP054PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 54A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 4500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP460PBF

IRFP460PBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
1,346 -

RFQ

IRFP460PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460APBF

IRFP460APBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
1,796 -

RFQ

IRFP460APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 105 nC @ 10 V ±30V 3100 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB18N50KPBF

IRFB18N50KPBF

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
2,987 -

RFQ

IRFB18N50KPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB20N50KPBF

IRFB20N50KPBF

MOSFET N-CH 500V 20A TO220AB

Vishay Siliconix
2,409 -

RFQ

IRFB20N50KPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 2870 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460LCPBF

IRFP460LCPBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
450 -

RFQ

IRFP460LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP264PBF

IRFP264PBF

MOSFET N-CH 250V 38A TO247-3

Vishay Siliconix
1,386 -

RFQ

IRFP264PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 38A (Tc) 10V 75mOhm @ 23A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 5400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHLR120-GE3

SIHLR120-GE3

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,000 -

RFQ

SIHLR120-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR9120-GE3

SIHFR9120-GE3

MOSFET P-CH 100V 5.6A DPAK

Vishay Siliconix
3,973 -

RFQ

SIHFR9120-GE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP260PBF

IRFP260PBF

MOSFET N-CH 200V 46A TO247-3

Vishay Siliconix
125 -

RFQ

IRFP260PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 46A (Tc) 10V 55mOhm @ 28A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
SISH114ADN-T1-GE3

SISH114ADN-T1-GE3

MOSFET N-CH 30V 18A/35A PPAK

Vishay Siliconix
3,885 -

RFQ

SISH114ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 35A (Tc) 4.5V, 10V 7.5mOhm @ 18A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1230 pF @ 15 V - 3.7W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 169170171172173174175176...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario