Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9530PBF

IRF9530PBF

MOSFET P-CH 100V 12A TO220AB

Vishay Siliconix
8,221 -

RFQ

IRF9530PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF510SPBF

IRF510SPBF

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
22,651 -

RFQ

IRF510SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9020PBF

IRFR9020PBF

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
2,331 -

RFQ

IRFR9020PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34PBF

IRFZ34PBF

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
10,552 -

RFQ

IRFZ34PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHFR9014-GE3

SIHFR9014-GE3

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
2,324 -

RFQ

SIHFR9014-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3443BDV-T1-GE3

SI3443BDV-T1-GE3

MOSFET P-CH 20V 3.6A 6TSOP

Vishay Siliconix
3,707 -

RFQ

SI3443BDV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 60mOhm @ 4.7A, 4.5V 1.4V @ 250µA 9 nC @ 4.5 V ±12V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU9020PBF

IRFU9020PBF

MOSFET P-CH 50V 9.9A TO251AA

Vishay Siliconix
1,103 -

RFQ

IRFU9020PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ20PBF

IRFZ20PBF

MOSFET N-CH 50V 15A TO220AB

Vishay Siliconix
1,821 -

RFQ

IRFZ20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 850 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840APBF

IRF840APBF

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix
23,265 -

RFQ

IRF840APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24PBF

IRF9Z24PBF

MOSFET P-CH 60V 11A TO220AB

Vishay Siliconix
1,455 -

RFQ

IRF9Z24PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34PBF

IRLZ34PBF

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
1,004 -

RFQ

IRLZ34PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34SPBF

IRF9Z34SPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix
925 -

RFQ

IRF9Z34SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9640PBF

IRF9640PBF

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix
8,137 -

RFQ

IRF9640PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740PBF

IRF740PBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
1,018 -

RFQ

IRF740PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD6N80E-GE3

SIHD6N80E-GE3

MOSFET N-CH 800V 5.4A DPAK

Vishay Siliconix
1,566 -

RFQ

SIHD6N80E-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ34SPBF

IRLZ34SPBF

MOSFET N-CH 60V 30A TO263

Vishay Siliconix
1,980 -

RFQ

IRLZ34SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840LCPBF

IRF840LCPBF

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix
7,911 -

RFQ

IRF840LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF640SPBF

IRF640SPBF

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix
2,025 -

RFQ

IRF640SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFPC50APBF

IRFPC50APBF

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix
650 -

RFQ

IRFPC50APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 580mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 2100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFDC20PBF

IRFDC20PBF

MOSFET N-CH 600V 320MA 4DIP

Vishay Siliconix
1,394 -

RFQ

IRFDC20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 320mA (Ta) 10V 4.4Ohm @ 190mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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