Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI3442BDV-T1-GE3

SI3442BDV-T1-GE3

MOSFET N-CH 20V 3A 6TSOP

Vishay Siliconix
3,353 -

RFQ

SI3442BDV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 57mOhm @ 4A, 4.5V 1.8V @ 250µA 5 nC @ 4.5 V ±12V 295 pF @ 10 V - 860mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7114DN-T1-E3

SI7114DN-T1-E3

MOSFET N-CH 30V 11.7A PPAK1212-8

Vishay Siliconix
15,247 -

RFQ

SI7114DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11.7A (Ta) 4.5V, 10V 7.5mOhm @ 18.3A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHFL9110TR-GE3

SIHFL9110TR-GE3

MOSFET P-CH 100V 1.1A SOT223

Vishay Siliconix
2,081 -

RFQ

SIHFL9110TR-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 1.1A (Tc) 10V 1.2Ohm @ 660mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR404DP-T1-GE3

SIR404DP-T1-GE3

MOSFET N-CH 20V 60A PPAK SO-8

Vishay Siliconix
14,457 -

RFQ

SIR404DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.6mOhm @ 20A, 10V 1.5V @ 250µA 97 nC @ 4.5 V ±12V 8130 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ14PBF

IRLZ14PBF

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
6,423 -

RFQ

IRLZ14PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9510PBF

IRF9510PBF

MOSFET P-CH 100V 4A TO220AB

Vishay Siliconix
3,353 -

RFQ

IRF9510PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF710PBF

IRF710PBF

MOSFET N-CH 400V 2A TO220AB

Vishay Siliconix
2,957 -

RFQ

IRF710PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9510PBF-BE3

IRF9510PBF-BE3

MOSFET P-CH 100V 4A TO220AB

Vishay Siliconix
1,762 -

RFQ

IRF9510PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) - 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF510PBF

IRF510PBF

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
19,944 -

RFQ

IRF510PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUD15N15-95-BE3

SUD15N15-95-BE3

MOSFET N-CH 150V 15A DPAK

Vishay Siliconix
9,136 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 15A (Tc) 6V, 10V 95mOhm @ 15A, 10V 2V @ 250µA 25 nC @ 10 V ±20V 900 pF @ 25 V - 2.7W (Ta), 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4425EY-T1_GE3

SQ4425EY-T1_GE3

MOSFET P-CHANNEL 30V 18A 8SOIC

Vishay Siliconix
270 -

RFQ

SQ4425EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 18A (Tc) 4.5V, 10V 12mOhm @ 13A, 10V 2.5V @ 250µA 50 nC @ 4.5 V ±20V 3630 pF @ 25 V - 6.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4122DY-T1-GE3

SI4122DY-T1-GE3

MOSFET N-CH 40V 27.2A 8SO

Vishay Siliconix
4,353 -

RFQ

SI4122DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 27.2A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.5V @ 250µA 95 nC @ 10 V ±25V 4200 pF @ 20 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA16DP-T1-GE3

SIRA16DP-T1-GE3

MOSFET N-CH 30V 16A PPAK SO-8

Vishay Siliconix
2,694 -

RFQ

SIRA16DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.8mOhm @ 15A, 10V 2.3V @ 250µA 47 nC @ 10 V +20V, -16V 2060 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFR120PBF

IRFR120PBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,450 -

RFQ

IRFR120PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS322DNT-T1-GE3

SIS322DNT-T1-GE3

MOSFET N-CH 30V 38.3A PPAK1212-8

Vishay Siliconix
2,881 -

RFQ

SIS322DNT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 38.3A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.4V @ 250µA 21.5 nC @ 10 V +20V, -16V 1000 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA436DJ-T4-GE3

SIA436DJ-T4-GE3

MOSFET N-CH 8V 12A PPAK SC70-6

Vishay Siliconix
2,848 -

RFQ

SIA436DJ-T4-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 12A (Tc) 1.2V, 4.5V 9.4mOhm @ 15.7A, 4.5V 800mV @ 250µA 25.2 nC @ 5 V ±5V 1508 pF @ 4 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR024PBF

IRFR024PBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
1,294 -

RFQ

IRFR024PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ14PBF

IRFZ14PBF

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
11,860 -

RFQ

IRFZ14PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9520PBF

IRF9520PBF

MOSFET P-CH 100V 6.8A TO220AB

Vishay Siliconix
1,571 -

RFQ

IRF9520PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z14PBF

IRF9Z14PBF

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
602 -

RFQ

IRF9Z14PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 4747 Record«Prev1... 165166167168169170171172...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario