Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFD210PBF

IRFD210PBF

MOSFET N-CH 200V 600MA 4DIP

Vishay Siliconix
12,239 -

RFQ

IRFD210PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD120PBF

IRFD120PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix
3,380 -

RFQ

IRFD120PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 10V 270mOhm @ 780mA, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFR9210PBF

IRFR9210PBF

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix
1,498 -

RFQ

IRFR9210PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4423DY-T1-E3

SI4423DY-T1-E3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix
3,579 -

RFQ

SI4423DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 7.5mOhm @ 14A, 4.5V 900mV @ 600µA 175 nC @ 5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFD123PBF

IRFD123PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix
1,780 -

RFQ

IRFD123PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 10V 270mOhm @ 780mA, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD014PBF

IRFD014PBF

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix
1,099 -

RFQ

IRFD014PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 10V 200mOhm @ 1A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 310 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFR9120PBF

IRFR9120PBF

MOSFET P-CH 100V 5.6A DPAK

Vishay Siliconix
2,790 -

RFQ

IRFR9120PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL520PBF

IRL520PBF

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
1,100 -

RFQ

IRL520PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU110PBF

IRLU110PBF

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix
1,207 -

RFQ

IRLU110PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730PBF

IRF730PBF

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
11,006 -

RFQ

IRF730PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9110PBF

IRFD9110PBF

MOSFET P-CH 100V 700MA 4DIP

Vishay Siliconix
1,999 -

RFQ

IRFD9110PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 10V 1.2Ohm @ 420mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRLR024PBF

IRLR024PBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
9,000 -

RFQ

IRLR024PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9620PBF

IRF9620PBF

MOSFET P-CH 200V 3.5A TO220AB

Vishay Siliconix
2,219 -

RFQ

IRF9620PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9520SPBF

IRF9520SPBF

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix
1,940 -

RFQ

IRF9520SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530PBF

IRL530PBF

MOSFET N-CH 100V 15A TO220AB

Vishay Siliconix
1,550 -

RFQ

IRL530PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD9210PBF

IRFD9210PBF

MOSFET P-CH 200V 400MA 4DIP

Vishay Siliconix
1,467 -

RFQ

IRFD9210PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 400mA (Ta) 10V 3Ohm @ 240mA, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
SUD40N08-16-E3

SUD40N08-16-E3

MOSFET N-CH 80V 40A TO252

Vishay Siliconix
2,000 -

RFQ

SUD40N08-16-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 10V 16mOhm @ 40A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1960 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF644PBF

IRF644PBF

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix
3,143 -

RFQ

IRF644PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820APBF

IRF820APBF

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
1,573 -

RFQ

IRF820APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL620PBF

IRL620PBF

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
1,140 -

RFQ

IRL620PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 5V 800mOhm @ 3.1A, 5V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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