Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIRA18DP-T1-RE3

SIRA18DP-T1-RE3

MOSFET N-CH 30V 33A PPAK SO-8

Vishay Siliconix
2,579 -

RFQ

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.4V @ 250µA 21.5 nC @ 10 V +20V, -16V 1000 pF @ 15 V - 14.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ3410EV-T1_GE3

SQ3410EV-T1_GE3

MOSFET N-CH 30V 8A 6TSOP

Vishay Siliconix
3,000 -

RFQ

SQ3410EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 17.5mOhm @ 5A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1005 pF @ 15 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISA40DN-T1-GE3

SISA40DN-T1-GE3

MOSFET N-CH 20V 43.7A/162A PPAK

Vishay Siliconix
15,556 -

RFQ

SISA40DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 20 V 43.7A (Ta), 162A (Tc) 2.5V, 10V 1.1mOhm @ 10A, 10V 1.5V @ 250µA 53 nC @ 10 V +12V, -8V 3415 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2316DS-T1-E3

SI2316DS-T1-E3

MOSFET N-CH 30V 2.9A SOT23-3

Vishay Siliconix
4,278 -

RFQ

SI2316DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4.5V, 10V 50mOhm @ 3.4A, 10V 800mV @ 250µA (Min) 7 nC @ 10 V ±20V 215 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2314EDS-T1-E3

SI2314EDS-T1-E3

MOSFET N-CH 20V 3.77A SOT23-3

Vishay Siliconix
79,402 -

RFQ

SI2314EDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3.77A (Ta) 1.8V, 4.5V 33mOhm @ 5A, 4.5V 950mV @ 250µA 14 nC @ 4.5 V ±12V - - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5424DC-T1-GE3

SI5424DC-T1-GE3

MOSFET N-CH 30V 6A 1206-8

Vishay Siliconix
5,600 -

RFQ

SI5424DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 24mOhm @ 4.8A, 10V 2.3V @ 250µA 32 nC @ 10 V ±25V 950 pF @ 15 V - 2.5W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL110TRPBF-BE3

IRLL110TRPBF-BE3

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
3,690 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3493BDV-T1-E3

SI3493BDV-T1-E3

MOSFET P-CH 20V 8A 6TSOP

Vishay Siliconix
32,997 -

RFQ

SI3493BDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 27.5mOhm @ 7A, 4.5V 900mV @ 250µA 43.5 nC @ 5 V ±8V 1805 pF @ 10 V - 2.08W (Ta), 2.97W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA24DN-T1-GE3

SISA24DN-T1-GE3

MOSFET N-CH 25V 60A PPAK1212-8

Vishay Siliconix
3,887 -

RFQ

SISA24DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.4mOhm @ 15A, 10V 2.1V @ 250µA 26 nC @ 4.5 V +20V, -16V 2650 pF @ 10 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB422EDK-T4-GE3

SIB422EDK-T4-GE3

MOSFET N-CH 20V 7.1A/9A PPAK

Vishay Siliconix
3,246 -

RFQ

SIB422EDK-T4-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 7.1A (Ta), 9A (Tc) 1.5V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 18 nC @ 10 V ±8V - - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA16DN-T1-GE3

SISA16DN-T1-GE3

MOSFET N-CH 30V 16A PPAK1212-8

Vishay Siliconix
3,746 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) - 6.8mOhm @ 15A, 10V 2.3V @ 250µA 47 nC @ 10 V - 2060 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
SI4010DY-T1-GE3

SI4010DY-T1-GE3

MOSFET N-CHANNEL 30V 31.3A 8SO

Vishay Siliconix
2,928 -

RFQ

SI4010DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31.3A (Tc) 4.5V, 10V 3.4mOhm @ 15A, 10V 2.3V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 6W (Tc) -55°C ~ 150°C (TA) Surface Mount
SI8497DB-T2-E1

SI8497DB-T2-E1

MOSFET P-CH 30V 13A 6MICROFOOT

Vishay Siliconix
2,594 -

RFQ

SI8497DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 2V, 4.5V 53mOhm @ 1.5A, 4.5V 1.1V @ 250µA 49 nC @ 10 V ±12V 1320 pF @ 15 V - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2310ES-T1_BE3

SQ2310ES-T1_BE3

MOSFET N-CH 20V 6A SOT23-3

Vishay Siliconix
26,705 -

RFQ

SQ2310ES-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.5V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 485 pF @ 10 V - 2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4101DY-T1-GE3

SI4101DY-T1-GE3

MOSFET P-CH 30V 25.7A 8SO

Vishay Siliconix
3,628 -

RFQ

SI4101DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 25.7A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.5V @ 250µA 203 nC @ 10 V ±20V 8190 pF @ 15 V - 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI9435BDY-T1-E3

SI9435BDY-T1-E3

MOSFET P-CH 30V 4.1A 8SO

Vishay Siliconix
21,644 -

RFQ

SI9435BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 4.5V, 10V 42mOhm @ 5.7A, 10V 3V @ 250µA 24 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI9433BDY-T1-E3

SI9433BDY-T1-E3

MOSFET P-CH 20V 4.5A 8SO

Vishay Siliconix
2,692 -

RFQ

SI9433BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.7V, 4.5V 40mOhm @ 6.2A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR110TRPBF

IRLR110TRPBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
1,051 -

RFQ

IRLR110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3499DV-T1-GE3

SI3499DV-T1-GE3

MOSFET P-CH 8V 5.3A 6TSOP

Vishay Siliconix
8,509 -

RFQ

SI3499DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 5.3A (Ta) 1.5V, 4.5V 23mOhm @ 7A, 4.5V 750mV @ 250µA 42 nC @ 4.5 V ±5V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS407DN-T1-GE3

SIS407DN-T1-GE3

MOSFET P-CH 20V 25A PPAK1212-8

Vishay Siliconix
4,292 -

RFQ

SIS407DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 25A (Tc) 1.8V, 4.5V 9.5mOhm @ 15.3A, 4.5V 1V @ 250µA 93.8 nC @ 8 V ±8V 2760 pF @ 10 V - 3.6W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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