Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI2372DS-T1-GE3

SI2372DS-T1-GE3

MOSFET N-CH 30V 4A/5.3A SOT23-3

Vishay Siliconix
2,328 -

RFQ

SI2372DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta), 5.3A (Tc) 4.5V, 10V 33mOhm @ 3A, 10V 2.5V @ 250µA 8.9 nC @ 10 V ±20V 288 pF @ 15 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4048DY-T1-GE3

SI4048DY-T1-GE3

MOSFET N-CH 30V 19.3A 8SO

Vishay Siliconix
2,659 -

RFQ

SI4048DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19.3A (Tc) 10V 85mOhm @ 15A, 10V 3V @ 250µA 51 nC @ 10 V ±20V 2060 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4410BDY-T1-GE3

SI4410BDY-T1-GE3

MOSFET N-CH 30V 7.5A 8SO

Vishay Siliconix
2,311 -

RFQ

SI4410BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 10V 13.5mOhm @ 10A, 10V 3V @ 250µA 20 nC @ 5 V ±20V - - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7102DN-T1-E3

SI7102DN-T1-E3

MOSFET N-CH 12V 35A PPAK 1212-8

Vishay Siliconix
3,579 -

RFQ

SI7102DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 35A (Tc) 2.5V, 4.5V 3.8mOhm @ 15A, 4.5V 1V @ 250µA 110 nC @ 8 V ±8V 3720 pF @ 6 V - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI8469DB-T2-E1

SI8469DB-T2-E1

MOSFET P-CH 8V 4.6A 4MICROFOOT

Vishay Siliconix
2,962 -

RFQ

SI8469DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 4.6A (Ta) 4.5V 64mOhm @ 1.5A, 4.5V 800mV @ 250µA 17 nC @ 4.5 V ±5V 900 pF @ 4 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA444DJT-T1-GE3

SIA444DJT-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix
2,071 -

RFQ

SIA444DJT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 17mOhm @ 7.4A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 560 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB404DK-T1-GE3

SIB404DK-T1-GE3

MOSFET N-CH 12V 9A PPAK SC75-6

Vishay Siliconix
3,470 -

RFQ

SIB404DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 9A (Tc) 4.5V 19mOhm @ 3A, 4.5V 800mV @ 250µA 15 nC @ 4.5 V ±5V - - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA96DP-T1-GE3

SIRA96DP-T1-GE3

MOSFET N-CH 30V 16A PPAK SO-8

Vishay Siliconix
3,275 -

RFQ

SIRA96DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 8.8mOhm @ 10A, 10V 2.2V @ 250µA 15 nC @ 4.5 V +20V, -16V 1385 pF @ 15 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2316BDS-T1-E3

SI2316BDS-T1-E3

MOSFET N-CH 30V 4.5A SOT23-3

Vishay Siliconix
9,573 -

RFQ

SI2316BDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Tc) 4.5V, 10V 50mOhm @ 3.9A, 10V 3V @ 250µA 9.6 nC @ 10 V ±20V 350 pF @ 15 V - 1.25W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2348ES-T1_GE3

SQ2348ES-T1_GE3

MOSFET N-CH 30V 8A TO236

Vishay Siliconix
3,777 -

RFQ

SQ2348ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 24mOhm @ 12A, 10V 2.5V @ 250µA 14.5 nC @ 10 V ±20V 540 pF @ 15 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4128DY-T1-E3

SI4128DY-T1-E3

MOSFET N-CH 30V 10.9A 8SO

Vishay Siliconix
10,892 -

RFQ

SI4128DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 10.9A (Ta) 4.5V, 10V 24mOhm @ 7.8A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 435 pF @ 15 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4485DY-T1-GE3

SI4485DY-T1-GE3

MOSFET P-CH 30V 6A 8SO

Vishay Siliconix
7,238 -

RFQ

SI4485DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 42mOhm @ 5.9A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 590 pF @ 15 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2348ES-T1_BE3

SQ2348ES-T1_BE3

MOSFET N-CH 30V 8A SOT23-3

Vishay Siliconix
19,966 -

RFQ

SQ2348ES-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 24mOhm @ 12A, 10V 2.5V @ 250µA 14.5 nC @ 10 V ±20V 540 pF @ 15 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3469DV-T1-E3

SI3469DV-T1-E3

MOSFET P-CH 20V 5A 6TSOP

Vishay Siliconix
35,825 -

RFQ

SI3469DV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 4.5V, 10V 30mOhm @ 6.7A, 10V 3V @ 250µA 30 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3443BDV-T1-E3

SI3443BDV-T1-E3

MOSFET P-CH 20V 3.6A 6TSOP

Vishay Siliconix
3,000 -

RFQ

SI3443BDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 60mOhm @ 4.7A, 4.5V 1.4V @ 250µA 9 nC @ 4.5 V ±12V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2343DS-T1-E3

SI2343DS-T1-E3

MOSFET P-CH 30V 3.1A SOT23-3

Vishay Siliconix
341 -

RFQ

SI2343DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 4.5V, 10V 53mOhm @ 4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 540 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA430DJT-T4-GE3

SIA430DJT-T4-GE3

MOSFET N-CH 20V 12A/12A PPAK

Vishay Siliconix
3,599 -

RFQ

SIA430DJT-T4-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta), 12A (Tc) 4.5V, 10V 13.5mOhm @ 7A, 10V 3V @ 250µA 18 nC @ 10 V ±20V 800 pF @ 10 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA88BDP-T1-GE3

SIRA88BDP-T1-GE3

MOSFET N-CH 30V 19A/40A PPAK SO8

Vishay Siliconix
3,253 -

RFQ

SIRA88BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 6.83mOhm @ 10A, 10V 2.4V @ 250µA 19 nC @ 10 V +20V, -16V 680 pF @ 15 V - 3.8W (Ta), 17W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1330EDL-T1-GE3

SI1330EDL-T1-GE3

MOSFET N-CH 60V 240MA SC70-3

Vishay Siliconix
3,467 -

RFQ

SI1330EDL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 3V, 10V 2.5Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA430DJT-T1-GE3

SIA430DJT-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Vishay Siliconix
2,753 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 4.5V, 10V 13.5mOhm @ 7A, 10V 3V @ 250µA 18 nC @ 10 V ±20V 800 pF @ 10 V - 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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