Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI1077X-T1-GE3

SI1077X-T1-GE3

MOSFET P-CH 20V SC89-6

Vishay Siliconix
7,609 -

RFQ

SI1077X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 1.75A (Ta) 1.5V, 4.5V 78mOhm @ 1.8A, 4.5V 1V @ 250µA 31.1 nC @ 8 V ±8V 965 pF @ 10 V - 330mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2302DDS-T1-GE3

SI2302DDS-T1-GE3

MOSFET N-CH 20V 2.9A SOT23-3

Vishay Siliconix
3,162 -

RFQ

SI2302DDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.9A (Tj) 2.5V, 4.5V 57mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5 nC @ 4.5 V ±8V - - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA18ADP-T1-GE3

SIRA18ADP-T1-GE3

MOSFET N-CH 30V 30.6A PPAK SO-8

Vishay Siliconix
26,458 -

RFQ

SIRA18ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 30.6A (Tc) 4.5V, 10V 8.7mOhm @ 10A, 10V 2.4V @ 250µA 21.5 nC @ 10 V +20V, -16V 1000 pF @ 15 V - 14.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1013X-T1-GE3

SI1013X-T1-GE3

MOSFET P-CH 20V 350MA SC89-3

Vishay Siliconix
17,986 -

RFQ

SI1013X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA465EDJ-T1-GE3

SIA465EDJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
3,360 -

RFQ

SIA465EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 16.5mOhm @ 7A, 4.5V 1.2V @ 250µA 72 nC @ 10 V ±12V 2130 pF @ 10 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA472EDJ-T1-GE3

SIA472EDJ-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix
3,371 -

RFQ

SIA472EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 2.5V, 4.5V 20mOhm @ 10.8A, 4.5V 1.5V @ 250µA 36 nC @ 10 V ±12V 1265 pF @ 15 V - 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1013R-T1-GE3

SI1013R-T1-GE3

MOSFET P-CH 20V 350MA SC75A

Vishay Siliconix
109,931 -

RFQ

SI1013R-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5 nC @ 4.5 V ±6V - - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2303CDS-T1-E3

SI2303CDS-T1-E3

MOSFET P-CH 30V 2.7A SOT23-3

Vishay Siliconix
2,083 -

RFQ

SI2303CDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Tc) 4.5V, 10V 190mOhm @ 1.9A, 10V 3V @ 250µA 8 nC @ 10 V ±20V 155 pF @ 15 V - 2.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA88DN-T1-GE3

SISA88DN-T1-GE3

MOSFET N-CH 30V 16.2A/40.5A PPAK

Vishay Siliconix
110,405 -

RFQ

SISA88DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 16.2A (Ta), 40.5A (Tc) 4.5V, 10V 6.7mOhm @ 10A, 10V 2.4V @ 250µA 25.5 nC @ 10 V +20V, -16V 985 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1330EDL-T1-E3

SI1330EDL-T1-E3

MOSFET N-CH 60V 240MA SC70-3

Vishay Siliconix
14,835 -

RFQ

SI1330EDL-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 3V, 10V 2.5Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3443CDV-T1-GE3

SI3443CDV-T1-GE3

MOSFET P-CH 20V 5.97A 6TSOP

Vishay Siliconix
37,185 -

RFQ

SI3443CDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5.97A (Tc) 2.5V, 4.5V 60mOhm @ 4.7A, 4.5V 1.5V @ 250µA 12.4 nC @ 5 V ±12V 610 pF @ 10 V - 2W (Ta), 3.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2351ES-T1_GE3

SQ2351ES-T1_GE3

MOSFET P-CH 20V 3.2A SOT23-3

Vishay Siliconix
13,546 -

RFQ

SQ2351ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Tc) 2.5V, 4.5V 115mOhm @ 2.4A, 4.5V 1.5V @ 250µA 5.5 nC @ 4.5 V ±12V 330 pF @ 10 V - 2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI5419DU-T1-GE3

SI5419DU-T1-GE3

MOSFET P-CH 30V 12A PPAK CHIPFET

Vishay Siliconix
11,318 -

RFQ

SI5419DU-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 20mOhm @ 6.6A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1400 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3443CDV-T1-E3

SI3443CDV-T1-E3

MOSFET P-CH 20V 5.97A 6TSOP

Vishay Siliconix
8,997 -

RFQ

SI3443CDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5.97A (Tc) 2.5V, 4.5V 60mOhm @ 4.7A, 4.5V 1.5V @ 250µA 12.4 nC @ 5 V ±12V 610 pF @ 10 V - 2W (Ta), 3.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS472ADN-T1-GE3

SIS472ADN-T1-GE3

MOSFET N-CH 30V 24A PPAK1212-8

Vishay Siliconix
2,523 -

RFQ

SIS472ADN-T1-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.4V @ 250µA 44 nC @ 10 V ±20V 1515 pF @ 15 V - 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA18ADN-T1-GE3

SISA18ADN-T1-GE3

MOSFET N-CH 30V 38.3A PPAK1212-8

Vishay Siliconix
10,181 -

RFQ

SISA18ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 38.3A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.4V @ 250µA 21.5 nC @ 10 V +20V, -16V 1000 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

MOSFET N-CH 30V 4.5A SOT23-3

Vishay Siliconix
159,219 -

RFQ

SI2316BDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Tc) 4.5V, 10V 50mOhm @ 3.9A, 10V 3V @ 250µA 9.6 nC @ 10 V ±20V 350 pF @ 15 V - 1.25W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3442BDV-T1-E3

SI3442BDV-T1-E3

MOSFET N-CH 20V 3A 6TSOP

Vishay Siliconix
7,937 -

RFQ

SI3442BDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 57mOhm @ 4A, 4.5V 1.8V @ 250µA 5 nC @ 4.5 V ±12V 295 pF @ 10 V - 860mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4128BDY-T1-GE3

SI4128BDY-T1-GE3

MOSFET N-CH 30V

Vishay Siliconix
2,879 -

RFQ

SI4128BDY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete - - - 8.3A (Ta), 12A (Tc) 4.5V, 10V - - - ±25V - - - - -
SIR774DP-T1-GE3

SIR774DP-T1-GE3

MOSFET N-CH 30V

Vishay Siliconix
2,993 -

RFQ

SIR774DP-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Obsolete - - - 32A (Ta), 40A (Tc) 4.5V, 10V - - - ±20V - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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