Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHA15N80AEF-GE3

SIHA15N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,088 -

RFQ

SIHA15N80AEF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 350mOhm @ 6.5A, 10V 4V @ 250µA 54 nC @ 10 V ±30V 1128 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIS412DN-T1-GE3

SIS412DN-T1-GE3

MOSFET N-CH 30V 12A PPAK1212-8

Vishay Siliconix
97,529 -

RFQ

SIS412DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 24mOhm @ 7.8A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 435 pF @ 15 V - 3.2W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD42N03-3M9P-GE3

SUD42N03-3M9P-GE3

MOSFET N-CH 30V 42A TO252

Vishay Siliconix
3,317 -

RFQ

SUD42N03-3M9P-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 3.9mOhm @ 22A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 3535 pF @ 15 V - 2.5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF30PBF-BE3

IRFBF30PBF-BE3

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix
2,688 -

RFQ

IRFBF30PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) - 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH080N60E-T1-GE3

SIHH080N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 8

Vishay Siliconix
2,476 -

RFQ

SIHH080N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP17N80AEF-GE3

SIHP17N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,483 -

RFQ

SIHP17N80AEF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHK125N60E-T1-GE3

SIHK125N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
2,983 -

RFQ

SIHK125N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1811 pF @ 100 V - 132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM70042E-GE3

SUM70042E-GE3

N-CHANNEL 100-V (D-S) MOSFET D2P

Vishay Siliconix
2,995 -

RFQ

SUM70042E-GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6490 pF @ 50 V - 278W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG15N80AEF-GE3

SIHG15N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,152 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 6.5A, 10V 4V @ 250µA 54 nC @ 10 V ±30V 1128 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48RPBF

IRFZ48RPBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,042 -

RFQ

IRFZ48RPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFL9110TRPBF

IRFL9110TRPBF

MOSFET P-CH 100V 1.1A SOT223

Vishay Siliconix
44,255 -

RFQ

IRFL9110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 1.1A (Tc) 10V 1.2Ohm @ 660mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS401EN-T1_BE3

SQS401EN-T1_BE3

MOSFET P-CH 40V 16A PPAK1212-8

Vishay Siliconix
41,078 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 29mOhm @ 12A, 10V 2.5V @ 250µA 21.2 nC @ 4.5 V ±20V 1875 pF @ 20 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG17N80AEF-GE3

SIHG17N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,986 -

RFQ

SIHG17N80AEF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI2337DS-T1-E3

SI2337DS-T1-E3

MOSFET P-CH 80V 2.2A SOT23-3

Vishay Siliconix
437 -

RFQ

SI2337DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 2.2A (Tc) 6V, 10V 270mOhm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 500 pF @ 40 V - 760mW (Ta), 2.5W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIHK105N60EF-T1GE3

SIHK105N60EF-T1GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
3,705 -

RFQ

SIHK105N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 10A, 10V 5V @ 250µA 51 nC @ 10 V ±30V 2301 pF @ 100 V - 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG21N80AEF-GE3

SIHG21N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,413 -

RFQ

SIHG21N80AEF-GE3

Ficha técnica

Bulk EF Active N-Channel MOSFET (Metal Oxide) 800 V 16.3A (Tc) 10V 250mOhm @ 8.5A, 10V 4V @ 250µA 71 nC @ 10 V ±30V 1511 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP35N60E-BE3

SIHP35N60E-BE3

N-CHANNEL 600V

Vishay Siliconix
3,831 -

RFQ

SIHP35N60E-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP50N10-21P-GE3

SUP50N10-21P-GE3

MOSFET N-CH 100V 50A TO220AB

Vishay Siliconix
3,803 -

RFQ

SUP50N10-21P-GE3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 6V, 10V 21mOhm @ 10A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 2055 pF @ 50 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIJH5700E-T1-GE3

SIJH5700E-T1-GE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix
2,402 -

RFQ

SIJH5700E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 17A (Ta), 174A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 7500 pF @ 75 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR462DP-T1-GE3

SIR462DP-T1-GE3

MOSFET N-CH 30V 30A PPAK SO-8

Vishay Siliconix
25,106 -

RFQ

SIR462DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 7.9mOhm @ 20A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1155 pF @ 15 V - 4.8W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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