Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

MOSFET P-CH 20V 3.1A SOT23-3

Vishay Siliconix
202,473 -

RFQ

SI2301CDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.1A (Tc) 2.5V, 4.5V 112mOhm @ 2.8A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 405 pF @ 10 V - 860mW (Ta), 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2304BDS-T1-GE3

SI2304BDS-T1-GE3

MOSFET N-CH 30V 2.6A SOT23-3

Vishay Siliconix
35,619 -

RFQ

SI2304BDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 70mOhm @ 2.5A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 225 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA22N60E-GE3

SIHA22N60E-GE3

N-CHANNEL 600V

Vishay Siliconix
2,044 -

RFQ

SIHA22N60E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EL Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUM70030M-GE3

SUM70030M-GE3

MOSFET N-CH 100V 150A TO263-7

Vishay Siliconix
3,271 -

RFQ

SUM70030M-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) - 3.5mOhm @ 30A, 10V 4V @ 250µA 214 nC @ 10 V ±20V 10870 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA22N60EL-GE3

SIHA22N60EL-GE3

N-CHANNEL600V

Vishay Siliconix
3,057 -

RFQ

SIHA22N60EL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7431DP-T1-E3

SI7431DP-T1-E3

MOSFET P-CH 200V 2.2A PPAK SO-8

Vishay Siliconix
2,867 -

RFQ

SI7431DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 2.2A (Ta) 6V, 10V 174mOhm @ 3.8A, 10V 4V @ 250µA 135 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7106DN-T1-E3

SI7106DN-T1-E3

MOSFET N-CH 20V 12.5A PPAK1212-8

Vishay Siliconix
93,591 -

RFQ

SI7106DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4038DY-T1-GE3

SI4038DY-T1-GE3

MOSFET N-CH 40V 42.5A 8SO

Vishay Siliconix
2,580 -

RFQ

SI4038DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42.5A (Tc) 4.5V, 10V 2.4mOhm @ 15A, 10V 2.1V @ 250µA 87 nC @ 10 V ±20V 4070 pF @ 20 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6660

2N6660

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix
3,882 -

RFQ

2N6660

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6660-2

2N6660-2

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix
3,670 -

RFQ

2N6660-2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6660-E3

2N6660-E3

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix
2,704 -

RFQ

2N6660-E3

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP0610K-T1-GE3

TP0610K-T1-GE3

MOSFET P-CH 60V 185MA SOT23-3

Vishay Siliconix
120,508 -

RFQ

TP0610K-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 185mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V 3V @ 250µA 1.7 nC @ 15 V ±20V 23 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIB410DK-T1-GE3

SIB410DK-T1-GE3

MOSFET N-CH 30V 9A PPAK SC75-6

Vishay Siliconix
2,429 -

RFQ

SIB410DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 1.8V, 4.5V 42mOhm @ 3.8A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 560 pF @ 15 V - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ7415AEN-T1_GE3

SQ7415AEN-T1_GE3

MOSFET P-CH 60V 16A PPAK1212-8

Vishay Siliconix
2,622 -

RFQ

SQ7415AEN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 4.5V, 10V 65mOhm @ 5.7A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1385 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH250N60EF-T1GE3

SIHH250N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,679 -

RFQ

SIHH250N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 250mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 915 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHK185N60E-T1-GE3

SIHK185N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
2,404 -

RFQ

SIHK185N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 185mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRS700DP-T1-RE3

SIRS700DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
2,433 -

RFQ

SIRS700DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta), 127A (Tc) 7.5V, 10V 3.5mOhm @ 20A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5950 pF @ 50 V - 7.4W (Ta),132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL540PBF-BE3

IRL540PBF-BE3

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix
2,649 -

RFQ

IRL540PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) - 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP0610K-T1-E3

TP0610K-T1-E3

MOSFET P-CH 60V 185MA SOT23-3

Vishay Siliconix
487,467 -

RFQ

TP0610K-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 185mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V 3V @ 250µA 1.7 nC @ 15 V ±20V 23 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR646DP-T1-GE3

SIR646DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,995 -

RFQ

SIR646DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 2230 pF @ 20 V - 5W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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