Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR470DP-T1-GE3

SIR470DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
6,964 -

RFQ

SIR470DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.3mOhm @ 20A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 5660 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7113DN-T1-E3

SI7113DN-T1-E3

MOSFET P-CH 100V 13.2A PPAK

Vishay Siliconix
2,118 -

RFQ

SI7113DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13.2A (Tc) 4.5V, 10V 134mOhm @ 4A, 10V 3V @ 250µA 55 nC @ 10 V ±20V 1480 pF @ 50 V - 3.7W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
IRFD9020PBF

IRFD9020PBF

MOSFET P-CH 60V 1.6A 4DIP

Vishay Siliconix
5,010 -

RFQ

IRFD9020PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 280mOhm @ 960mA, 10V 4V @ 1µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD110PBF

IRFD110PBF

MOSFET N-CH 100V 1A 4DIP

Vishay Siliconix
26,466 -

RFQ

IRFD110PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 540mOhm @ 600mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
SUD50N06-09L-E3

SUD50N06-09L-E3

MOSFET N-CH 60V 50A TO252

Vishay Siliconix
1,633 -

RFQ

SUD50N06-09L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 20A, 10V 3V @ 250µA 70 nC @ 10 V ±20V 2650 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM10250E_GE3

SQM10250E_GE3

MOSFET N-CH 250V 65A TO263

Vishay Siliconix
1,760 -

RFQ

SQM10250E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 65A (Tc) 7.5V, 10V 30mOhm @ 15A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 4050 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM80090E-GE3

SUM80090E-GE3

MOSFET N-CH 150V 128A D2PAK

Vishay Siliconix
1,854 -

RFQ

SUM80090E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 128A (Tc) 7.5V, 10V 9mOhm @ 30A, 10V 5V @ 250µA 95 nC @ 10 V ±20V 3425 pF @ 75 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF740ASPBF

IRF740ASPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
779 -

RFQ

IRF740ASPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP9140PBF

IRFP9140PBF

MOSFET P-CH 100V 21A TO247-3

Vishay Siliconix
323 -

RFQ

IRFP9140PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 200mOhm @ 13A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUM110P04-05-E3

SUM110P04-05-E3

MOSFET P-CH 40V 110A TO263

Vishay Siliconix
27,850 -

RFQ

SUM110P04-05-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 5mOhm @ 20A, 10V 4V @ 250µA 280 nC @ 10 V ±20V 11300 pF @ 25 V - 15W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP25N40D-GE3

SIHP25N40D-GE3

MOSFET N-CH 400V 25A TO220AB

Vishay Siliconix
2,813 -

RFQ

SIHP25N40D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI8805EDB-T2-E1

SI8805EDB-T2-E1

MOSFET P-CH 8V 4MICROFOOT

Vishay Siliconix
2,440 -

RFQ

SI8805EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 2.2A (Ta) 1.2V, 4.5V 68mOhm @ 1.5A, 4.5V 700mV @ 250µA 10 nC @ 4.5 V ±5V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHK065N60E-T1-GE3

SIHK065N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
2,629 -

RFQ

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2946 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHK075N60EF-T1GE3

SIHK075N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,062 -

RFQ

SIHK075N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG24N80AEF-GE3

SIHG24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,110 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG080N60E-GE3

SIHG080N60E-GE3

E SERIES POWER MOSFET TO-247AC

Vishay Siliconix
3,933 -

RFQ

SIHG080N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ)
SIHK055N60E-T1-GE3

SIHK055N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
2,190 -

RFQ

SIHK055N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 56mOhm @ 16A, 10V 5V @ 250µA 81 nC @ 10 V ±30V 3504 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHK055N60EF-T1GE3

SIHK055N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,039 -

RFQ

SIHK055N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3667 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM60061EL-GE3

SUM60061EL-GE3

P-CHANNEL 80 V (D-S) MOSFET D2PA

Vishay Siliconix
2,653 -

RFQ

SUM60061EL-GE3

Ficha técnica

Bulk TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 4.5V, 10V 6.1mOhm @ 20A, 10V 2.5V @ 250µA 218 nC @ 10 V ±20V 9600 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQW33N65EF-GE3

SQW33N65EF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,619 -

RFQ

SQW33N65EF-GE3

Ficha técnica

Bulk Automotive, AEC-Q101, E Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 109mOhm @ 16.5A, 10V 4V @ 250µA 173 nC @ 10 V ±30V 3972 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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