Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR165DP-T1-GE3

SIR165DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

Vishay Siliconix
15,070 -

RFQ

SIR165DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 4.6mOhm @ 15A, 10V 2.3V @ 250µA 138 nC @ 10 V ±20V 4930 pF @ 15 V - 69.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR878BDP-T1-RE3

SIR878BDP-T1-RE3

MOSFET N-CH 100V 12A/42.5A PPAK

Vishay Siliconix
10,552 -

RFQ

SIR878BDP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 42.5A (Tc) 7.5V, 10V 14.4mOhm @ 15A, 10V 3.4V @ 250µA 38 nC @ 10 V ±20V 1850 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR106ADP-T1-RE3

SIR106ADP-T1-RE3

MOSFET N-CH 100V 16.1A/65.8 PPAK

Vishay Siliconix
18,371 -

RFQ

SIR106ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 16.1A (Ta), 65.8 (Tc) 7.5V, 10V 8mOhm @ 15A, 10V 4V @ 250µA 52 nC @ 10 V ±20V 2440 pF @ 50 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4463BDY-T1-E3

SI4463BDY-T1-E3

MOSFET P-CH 20V 9.8A 8SO

Vishay Siliconix
9,726 -

RFQ

SI4463BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Ta) 2.5V, 10V 11mOhm @ 13.7A, 10V 1.4V @ 250µA 56 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7336ADP-T1-E3

SI7336ADP-T1-E3

MOSFET N-CH 30V 30A PPAK SO-8

Vishay Siliconix
12,773 -

RFQ

SI7336ADP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) 4.5V, 10V 3mOhm @ 25A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5600 pF @ 15 V - 5.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHK125N60EF-T1GE3

SIHK125N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,574 -

RFQ

SIHK125N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1863 pF @ 100 V - 132W (Tc) -55°C ~ 150°C Surface Mount
SIHK075N60E-T1-GE3

SIHK075N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
3,458 -

RFQ

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 80mOhm @ 13A, 10V 5V @ 250µA 62 nC @ 10 V ±30V 2582 pF @ 100 V - 167W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF080N60E-GE3

SIHF080N60E-GE3

E SERIES POWER MOSFET TO-220 FUL

Vishay Siliconix
2,840 -

RFQ

SIHF080N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9020TRPBF

IRFR9020TRPBF

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
12,053 -

RFQ

IRFR9020TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9510STRLPBF

IRF9510STRLPBF

MOSFET P-CH 100V 4A D2PAK

Vishay Siliconix
13,190 -

RFQ

IRF9510STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3

MOSFET N-CH 100V 95A PPAK SO-8DC

Vishay Siliconix
16,843 -

RFQ

SIDR870ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 95A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2866 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4421DY-T1-E3

SI4421DY-T1-E3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix
1,799 -

RFQ

SI4421DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 8.75mOhm @ 14A, 4.5V 800mV @ 850µA 125 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7141DP-T1-GE3

SI7141DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8

Vishay Siliconix
3,254 -

RFQ

SI7141DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 25A, 10V 2.3V @ 250µA 400 nC @ 10 V ±20V 14300 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR680LDP-T1-RE3

SIR680LDP-T1-RE3

MOSFET N-CH 80V 31.8A/130A PPAK

Vishay Siliconix
5,325 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 31.8A (Ta), 130A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 7250 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR870ADP-T1-RE3

SIDR870ADP-T1-RE3

N-CHANNEL 100-V (D-S) MOSFET

Vishay Siliconix
35,890 -

RFQ

SIDR870ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 21.8A (Ta), 95A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2866 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD50P10-43L-E3

SUD50P10-43L-E3

MOSFET P-CH 100V 37.1A TO252

Vishay Siliconix
2,459 -

RFQ

SUD50P10-43L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 37.1A (Tc) 4.5V, 10V 43mOhm @ 9.2A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 8.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540STRLPBF

IRF540STRLPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
19,600 -

RFQ

IRF540STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530PBF

IRF530PBF

MOSFET N-CH 100V 14A TO220AB

Vishay Siliconix
15,019 -

RFQ

IRF530PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUD50P10-43L-GE3

SUD50P10-43L-GE3

MOSFET P-CH 100V 37.1A TO252

Vishay Siliconix
21,650 -

RFQ

SUD50P10-43L-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 37.1A (Tc) 4.5V, 10V 43mOhm @ 9.2A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 8.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9640STRLPBF

IRF9640STRLPBF

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix
23,064 -

RFQ

IRF9640STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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