Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFD9123

IRFD9123

MOSFET P-CH 100V 1A 4DIP

Vishay Siliconix
2,529 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) - 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V - 390 pF @ 25 V - - - Through Hole
IRFP21N60L

IRFP21N60L

MOSFET N-CH 600V 21A TO247-3

Vishay Siliconix
3,783 -

RFQ

IRFP21N60L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 320mOhm @ 13A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 4000 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP22N60K

IRFP22N60K

MOSFET N-CH 600V 22A TO247-3

Vishay Siliconix
3,331 -

RFQ

IRFP22N60K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 280mOhm @ 13A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3570 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP26N60L

IRFP26N60L

MOSFET N-CH 600V 26A TO247-3

Vishay Siliconix
3,303 -

RFQ

IRFP26N60L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 5020 pF @ 25 V - 470W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP27N60K

IRFP27N60K

MOSFET N-CH 600V 27A TO247-3

Vishay Siliconix
2,525 -

RFQ

IRFP27N60K

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 220mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 4660 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS38N60L

IRFPS38N60L

MOSFET N-CH 600V 38A SUPER247

Vishay Siliconix
2,713 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 150mOhm @ 23A, 10V 5V @ 250µA 320 nC @ 10 V ±30V 7990 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS40N60K

IRFPS40N60K

MOSFET N-CH 600V 40A SUPER247

Vishay Siliconix
3,992 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4196DY-T1-GE3

SI4196DY-T1-GE3

MOSFET N-CH 20V 8A 8SO

Vishay Siliconix
3,821 -

RFQ

SI4196DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 27mOhm @ 8A, 4.5V 1V @ 250µA 22 nC @ 8 V ±8V 830 pF @ 10 V - 2W (Ta), 4.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4752DY-T1-GE3

SI4752DY-T1-GE3

MOSFET N-CH 30V 25A 8SO

Vishay Siliconix
3,128 -

RFQ

SI4752DY-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 5.5mOhm @ 10A, 10V 2.2V @ 1mA 43 nC @ 10 V ±20V 1700 pF @ 15 V Schottky Diode (Body) 3W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA17N80AEF-GE3

SIHA17N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,469 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI8809EDB-T2-E1

SI8809EDB-T2-E1

MOSFET P-CH 20V 1.9A MICROFOOT

Vishay Siliconix
2,179 -

RFQ

SI8809EDB-T2-E1

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.94 (Ta) 1.8V, 4.5V 90mOhm @ 1.5A, 4.5V 900mV @ 250µA 15 nC @ 8 V ±8V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHB30N60E-E3

SIHB30N60E-E3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix
3,511 -

RFQ

SIHB30N60E-E3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHW23N60E-GE3

SIHW23N60E-GE3

MOSFET N-CH 600V 23A TO247AD

Vishay Siliconix
3,016 -

RFQ

SIHW23N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW47N65E-GE3

SIHW47N65E-GE3

MOSFET N-CH 650V 47A TO247AD

Vishay Siliconix
2,547 -

RFQ

SIHW47N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 72mOhm @ 24A, 10V 4V @ 250µA 273 nC @ 10 V ±20V 5682 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR482DP-T1-GE3

SIR482DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
3,687 -

RFQ

SIR482DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 2.3V @ 250µA 38 nC @ 10 V ±20V 1575 pF @ 15 V - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR814DP-T1-GE3

SIR814DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
2,795 -

RFQ

SIR814DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.3V @ 250µA 86 nC @ 10 V ±20V 3800 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS330DN-T1-GE3

SIS330DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,916 -

RFQ

SIS330DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 5.6mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1300 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS334DN-T1-GE3

SIS334DN-T1-GE3

MOSFET N-CH 30V 20A PPAK1212-8

Vishay Siliconix
2,191 -

RFQ

SIS334DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 11.3mOhm @ 10A, 10V 2.4V @ 250µA 18 nC @ 10 V ±20V 640 pF @ 15 V - 3.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS448DN-T1-GE3

SIS448DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,210 -

RFQ

SIS448DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 5.6mOhm @ 10A, 10V 2.3V @ 250µA 38 nC @ 10 V ±20V 1575 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJH112E-T1-GE3

SIJH112E-T1-GE3

MOSFET N-CH 100V 23A/225A PPAK

Vishay Siliconix
3,960 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta), 225A (Tc) - 2.8mOhm @ 20A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 8050 pF @ 50 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 4747 Record«Prev1... 153154155156157158159160...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario