Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIS776DN-T1-GE3

SIS776DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,476 -

RFQ

SIS776DN-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6.2mOhm @ 10A, 10V 2.5V @ 250µA 36 nC @ 10 V ±20V 1360 pF @ 15 V Schottky Diode (Body) 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SUD50N03-06AP-T4E3

SUD50N03-06AP-T4E3

MOSFET N-CH 30V 90A TO252

Vishay Siliconix
3,752 -

RFQ

SUD50N03-06AP-T4E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 2.4V @ 250µA 95 nC @ 10 V ±20V 3800 pF @ 15 V - 10W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUP53P06-20-GE3

SUP53P06-20-GE3

MOSFET P-CH 60V 9.2A/53A TO220AB

Vishay Siliconix
3,331 -

RFQ

SUP53P06-20-GE3

Ficha técnica

Tube TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.2A (Ta), 53A (Tc) 4.5V, 10V 19.5mOhm @ 30A, 10V 3V @ 250µA 115 nC @ 10 V ±20V 3500 pF @ 25 V - 3.1W (Ta), 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
VP0300B-E3

VP0300B-E3

MOSFET P-CH 30V 0.32A TO-205

Vishay Siliconix
3,399 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 320mA (Ta) - 2.5Ohm @ 1A, 12V 4.5V @ 1mA - - 150 pF @ 15 V - - - -
VP0808B

VP0808B

MOSFET P-CH 80V 880MA TO39

Vishay Siliconix
3,002 -

RFQ

VP0808B

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 80 V 880mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP0808B-2

VP0808B-2

MOSFET P-CH 80V 880MA TO39

Vishay Siliconix
2,812 -

RFQ

VP0808B-2

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 80 V 880mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP0808B-E3

VP0808B-E3

MOSFET P-CH 80V 880MA TO39

Vishay Siliconix
3,056 -

RFQ

VP0808B-E3

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 80 V 880mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP1008B

VP1008B

MOSFET P-CH 100V 790MA TO39

Vishay Siliconix
2,841 -

RFQ

VP1008B

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 790mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VQ1004P

VQ1004P

MOSFET N-CH 60V 0.4A TO-205

Vishay Siliconix
3,038 -

RFQ

Tube - Obsolete - - - 830mA (Ta) 5V, 10V - - - ±20V - - - - -
VQ1004P-2

VQ1004P-2

MOSFET N-CH 60V 0.4A TO-205

Vishay Siliconix
2,668 -

RFQ

Tube - Obsolete - - - - 5V, 10V - - - ±20V - - - - -
VQ1004P-E3

VQ1004P-E3

MOSFET N-CH 60V 0.4A TO-205

Vishay Siliconix
2,227 -

RFQ

Tube - Obsolete - - - 830mA (Ta) 5V, 10V - - - ±20V - - - - -
SI2318DS-T1-E3

SI2318DS-T1-E3

MOSFET N-CH 40V 3A SOT23-3

Vishay Siliconix
2,176 -

RFQ

SI2318DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 3A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 540 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLD014PBF

IRLD014PBF

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix
4,014 -

RFQ

IRLD014PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 4V, 5V 200mOhm @ 1A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
SI2307CDS-T1-E3

SI2307CDS-T1-E3

MOSFET P-CH 30V 3.5A SOT23-3

Vishay Siliconix
25,038 -

RFQ

SI2307CDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Tc) 4.5V, 10V 88mOhm @ 3.5A, 10V 3V @ 250µA 6.2 nC @ 4.5 V ±20V 340 pF @ 15 V - 1.1W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1021R-T1-GE3

SI1021R-T1-GE3

MOSFET P-CH 60V 190MA SC75A

Vishay Siliconix
52,326 -

RFQ

SI1021R-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 190mA (Ta) 4.5V, 10V 4Ohm @ 500mA, 10V 3V @ 250µA 1.7 nC @ 15 V ±20V 23 pF @ 25 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

MOSFET N-CH 20V 3.9A SOT23-3

Vishay Siliconix
40,855 -

RFQ

SI2312BDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.8V, 4.5V 31mOhm @ 5A, 4.5V 850mV @ 250µA 12 nC @ 4.5 V ±8V - - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA400EDJ-T1-GE3

SIA400EDJ-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix
38,050 -

RFQ

SIA400EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 2.5V, 4.5V 19mOhm @ 11A, 4.5V 1.5V @ 250µA 36 nC @ 10 V ±12V 1265 pF @ 15 V - 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1022R-T1-GE3

SI1022R-T1-GE3

MOSFET N-CH 60V 330MA SC75A

Vishay Siliconix
56,910 -

RFQ

SI1022R-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 330mA (Ta) 4.5V, 10V 1.25Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 30 pF @ 25 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA21N65EF-GE3

SIHA21N65EF-GE3

N-CHANNEL 600V

Vishay Siliconix
2,765 -

RFQ

SIHA21N65EF-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIJH800E-T1-GE3

SIJH800E-T1-GE3

N-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix
3,670 -

RFQ

SIJH800E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 29A (Ta), 299A (Tc) 7.5V, 10V 1.55mOhm @ 20A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 10230 pF @ 40 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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