Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR184DP-T1-RE3

SIR184DP-T1-RE3

MOSFET N-CH 60V 20.7A/73A PPAK

Vishay Siliconix
9,718 -

RFQ

SIR184DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 20.7A (Ta), 73A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V 3.4V @ 250µA 32 nC @ 10 V ±20V 1490 pF @ 30 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD06N10-225L-GE3

SUD06N10-225L-GE3

MOSFET N-CH 100V 6.5A TO252AA

Vishay Siliconix
3,586 -

RFQ

SUD06N10-225L-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 4.5V, 10V 200mOhm @ 3A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 240 pF @ 25 V - 1.25W (Ta), 16.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR330DP-T1-GE3

SIR330DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
3,373 -

RFQ

SIR330DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 5.6mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1300 pF @ 15 V - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA34DP-T1-GE3

SIRA34DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
2,387 -

RFQ

SIRA34DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 6.7mOhm @ 10A, 10V 2.4V @ 250µA 25 nC @ 10 V +20V, -16V 1100 pF @ 15 V - 3.3W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR418DP-T1-GE3

SIR418DP-T1-GE3

MOSFET N-CH 40V 40A PPAK SO-8

Vishay Siliconix
33,465 -

RFQ

SIR418DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 2410 pF @ 20 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR696DP-T1-GE3

SIR696DP-T1-GE3

MOSFET N-CH 125V 60A PPAK SO-8

Vishay Siliconix
11,378 -

RFQ

SIR696DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 125 V 60A (Tc) 7.5V, 10V 11.5mOhm @ 20A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1410 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4874BDY-T1-E3

SI4874BDY-T1-E3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
9,562 -

RFQ

SI4874BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V 3230 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR606BDP-T1-RE3

SIR606BDP-T1-RE3

MOSFET N-CH 100V 10.9A PPAK

Vishay Siliconix
38,109 -

RFQ

SIR606BDP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 10.9A (Ta), 38.7A (Tc) 7.5V, 10V 17.4mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1470 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP080N60E-GE3

SIHP080N60E-GE3

E SERIES POWER MOSFET TO-220AB

Vishay Siliconix
3,236 -

RFQ

SIHP080N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ)
SQ2319ES-T1-GE3

SQ2319ES-T1-GE3

MOSFET P-CH 40V 4.6A TO-236

Vishay Siliconix
3,172 -

RFQ

SQ2319ES-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Tc) - 75mOhm @ 3A, 10V 2.5V @ 250µA 16 nC @ 10 V - 620 pF @ 25 V - - - Surface Mount
SIHB30N60ET5-GE3

SIHB30N60ET5-GE3

N-CHANNEL 600V

Vishay Siliconix
3,927 -

RFQ

SIHB30N60ET5-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB105N60EF-GE3

SIHB105N60EF-GE3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix
2,001 -

RFQ

SIHB105N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH105N60EF-T1GE3

SIHH105N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,850 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 105mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 2099 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB28N60EF-T1-GE3

SIHB28N60EF-T1-GE3

N-CHANNEL 600V

Vishay Siliconix
3,165 -

RFQ

SIHB28N60EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB28N60EF-T5-GE3

SIHB28N60EF-T5-GE3

N-CHANNEL 600V

Vishay Siliconix
3,274 -

RFQ

SIHB28N60EF-T5-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM90100E-GE3

SUM90100E-GE3

N-CHANNEL 200-V (D-S) MOSFET D2P

Vishay Siliconix
3,564 -

RFQ

SUM90100E-GE3

Ficha técnica

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 7.5V, 10V 11.4mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3930 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIJH600E-T1-GE3

SIJH600E-T1-GE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix
3,478 -

RFQ

SIJH600E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Ta), 373A (Tc) 7.5V, 10V 0.92Ohm @ 20A, 10V 4V @ 250µA 212 nC @ 10 V ±20V 9950 pF @ 30 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG24N80AE-GE3

SIHG24N80AE-GE3

MOSFET N-CH 800V 21A TO247AC

Vishay Siliconix
3,327 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 21A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP24N80AEF-GE3

SIHP24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,372 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50N04-5M6_T4GE3

SQD50N04-5M6_T4GE3

MOSFET N-CH 40V 50A TO252AA

Vishay Siliconix
39,988 -

RFQ

SQD50N04-5M6_T4GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 5.6mOhm @ 20A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 4000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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