Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHA18N60E-GE3

SIHA18N60E-GE3

N-CHANNEL 600V

Vishay Siliconix
3,737 -

RFQ

SIHA18N60E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 202mOhm @ 9A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA25N50E-GE3

SIHA25N50E-GE3

N-CHANNEL 500V

Vishay Siliconix
3,544 -

RFQ

SIHA25N50E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR644DP-T1-GE3

SIR644DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,561 -

RFQ

SIR644DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.2V @ 250µA 71 nC @ 10 V ±20V 3200 pF @ 20 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS439DNT-T1-GE3

SIS439DNT-T1-GE3

MOSFET P-CH 30V 50A PPAK1212-8S

Vishay Siliconix
2,750 -

RFQ

SIS439DNT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V 2.8V @ 250µA 68 nC @ 10 V ±20V 2135 pF @ 15 V - 3.8W (Ta), 52.1W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI5415AEDU-T1-GE3

SI5415AEDU-T1-GE3

MOSFET P-CH 20V 25A PPAK

Vishay Siliconix
3,154 -

RFQ

SI5415AEDU-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 25A (Tc) 1.8V, 4.5V 9.6mOhm @ 10A, 4.5V 1V @ 250µA 120 nC @ 8 V ±8V 4300 pF @ 10 V - 3.1W (Ta), 31W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SQJQ160E-T1_GE3

SQJQ160E-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix
2,930 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 602A (Tc) 10V 0.85mOhm @ 20A, 10V 3.5V @ 250µA 275 nC @ 10 V ±20V 16070 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR626EP-T1-RE3

SIDR626EP-T1-RE3

N-CHANNEL 60 V (D-S) 175C MOSFET

Vishay Siliconix
3,225 -

RFQ

SIDR626EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50.8A (Ta), 227A (Tc) 7.5V, 10V 1.74mOhm @ 20A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 5130 pF @ 30 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ131EL-T1_GE3

SQJQ131EL-T1_GE3

AUTOMOTIVE P-CHANNEL 30 V (D-S)

Vishay Siliconix
3,702 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 30 V 280A (Tc) 4.5V, 10V 1.4mOhm @ 10A, 10V 2.5V @ 250µA 731 nC @ 10 V ±20V 33050 pF @ 15 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ130EL-T1_GE3

SQJQ130EL-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix
2,837 -

RFQ

SQJQ130EL-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 445A (Tc) 4.5V, 10V 0.52mOhm @ 20A, 10V 2.5V @ 250µA 455 nC @ 10 V ±20V 23345 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ140E-T1_GE3

SQJQ140E-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix
3,118 -

RFQ

SQJQ140E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 701A (Tc) 10V 0.53mOhm @ 20A, 10V 3.3V @ 250µA 288 nC @ 10 V ±20V 17000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRS700DP-T1-GE3

SIRS700DP-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
3,358 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta), 127A (Tc) 7.5V, 10V 3.5mOhm @ 20A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5950 pF @ 50 V - 7.4W (Ta),132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR500EP-T1-RE3

SIDR500EP-T1-RE3

N-CHANNEL 30 V (D-S) 175C MOSFET

Vishay Siliconix
3,739 -

RFQ

SIDR500EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 30 V 94A (Ta), 421A (Tc) 4.5V, 10V 0.47mOhm @ 20A, 10V 2.2V @ 250µA 180 nC @ 10 V +16V, -12V 8960 pF @ 15 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR120PBF-BE3

IRFR120PBF-BE3

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
6,000 -

RFQ

IRFR120PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) - 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5411EDU-T1-GE3

SI5411EDU-T1-GE3

MOSFET P-CH 12V 25A PPAK

Vishay Siliconix
2,076 -

RFQ

SI5411EDU-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 25A (Tc) 1.8V, 4.5V 8.2mOhm @ 6A, 4.5V 900mV @ 250µA 105 nC @ 8 V ±8V 4100 pF @ 6 V - 3.1W (Ta), 31W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIA453EDJ-T1-GE3

SIA453EDJ-T1-GE3

MOSFET P-CH 30V 24A PPAK SC70-6

Vishay Siliconix
2,427 -

RFQ

SIA453EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 2.5V, 10V 18.5mOhm @ 5A, 10V 1.4V @ 250µA 66 nC @ 10 V ±12V 1900 pF @ 15 V - 3.5W (Ta), 19W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay Siliconix
44,899 -

RFQ

SIA413DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Tc) 1.5V, 4.5V 29mOhm @ 6.7A, 4.5V 1V @ 250µA 57 nC @ 8 V ±8V 1800 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ184ER-T1_GE3

SQJQ184ER-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix
3,403 -

RFQ

SQJQ184ER-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 430A (Tc) 10V 1.4mOhm @ 20A, 10V 3.5V @ 250µA 240 nC @ 10 V ±20V 16009 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP7N60E-BE3

SIHP7N60E-BE3

N-CHANNEL 600V

Vishay Siliconix
2,615 -

RFQ

SIHP7N60E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIDR610EP-T1-RE3

SIDR610EP-T1-RE3

N-CHANNEL 200 V (D-S) 175C MOSFE

Vishay Siliconix
3,619 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 8.9A (Ta), 39.6A (Tc) 7.5V, 10V 31.9mOhm @ 10A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1380 pF @ 100 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ112ER-T1_GE3

SQJQ112ER-T1_GE3

AUTOMOTIVE N-CHANNEL 100 V (D-S)

Vishay Siliconix
3,266 -

RFQ

SQJQ112ER-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 296A (Tc) 10V 2.53mOhm @ 20A, 10V 3.5V @ 250µA 272 nC @ 10 V ±20V 15945 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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