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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CRS20I40A(TE85L,QM DIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage	2,826	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	35pF @ 10V, 1MHz	-	60 µA @ 40 V	40 V	2A	150°C (Max)	600 mV @ 2 A
CRS20I40B(TE85L,QM DIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage	3,998	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	62pF @ 10V, 1MHz	-	100 µA @ 40 V	40 V	2A	150°C (Max)	520 mV @ 2 A
CRS30I30A(TE85L,QM DIODE SCHOTTKY 30V 3A S-FLAT Toshiba Semiconductor and Storage	2,052	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	82pF @ 10V, 1MHz	-	100 µA @ 30 V	30 V	3A	150°C (Max)	490 mV @ 3 A
DSF01S30SC,L3F DIODE SCHOTTKY 30V 100MA SC2 Toshiba Semiconductor and Storage	2,382	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	9.3pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	100mA	125°C (Max)	500 mV @ 100 mA
CRH01(TE85R,Q,M) DIODE GEN PURP 200V 1A SFLAT Toshiba Semiconductor and Storage	2,896	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	980 mV @ 1 A
CRS12(TE85L,Q,M) DIODE SCHOTTKY 60V 1A SFLAT Toshiba Semiconductor and Storage	2,321	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 60 V	60 V	1A	-40°C ~ 150°C	580 mV @ 1 A
CMS21(TE12L,Q,M) X35 PB-F DIODE M-FLAT MOQ=3000 V Toshiba Semiconductor and Storage	3,756	-	RFQ		Tape & Reel (TR)	RoHS	-	-	Active	-	-	-	-	-	-	-	-
CMF03(TE12L,Q,M) DIODE GEN PURP 900V 500MA M-FLAT Toshiba Semiconductor and Storage	3,300	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 900 V	900 V	500mA	-40°C ~ 125°C	2.5 V @ 500 mA
CRF03(TE85L,Q,M) DIODE GEN PURP 600V 700MA SFLAT Toshiba Semiconductor and Storage	2,668	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Last Time Buy	Surface Mount	-	100 ns	50 µA @ 600 V	600 V	700mA	-40°C ~ 150°C	2 V @ 700 mA
CRG05(TE85L,Q,M) DIODE GEN PURP 800V 1A S-FLAT Toshiba Semiconductor and Storage	2,686	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	10 µA @ 800 V	800 V	1A	-40°C ~ 150°C	1.2 V @ 1 A
CMF01A,LQ(M MOSFET N-CH Toshiba Semiconductor and Storage	3,672	-	RFQ	Ficha técnica	Box	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 600 V	600 V	2A	150°C	2 V @ 2 A
CMF02A,LQ(M MOSFET N-CH Toshiba Semiconductor and Storage	3,789	-	RFQ	Ficha técnica	Box	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 600 V	600 V	1A	150°C	2 V @ 1 A
CMG03A,LQ(M MOSFET N-CH Toshiba Semiconductor and Storage	2,709	-	RFQ	Ficha técnica	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	5 µA @ 600 V	600 V	2A	150°C	1.1 V @ 2 A
CMG06A,LQ(M MOSFET N-CH Toshiba Semiconductor and Storage	2,009	-	RFQ	Ficha técnica	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	5 µA @ 600 V	600 V	1A	150°C	1.1 V @ 1 A
CRF03A,LQ(M MOSFET N-CH Toshiba Semiconductor and Storage	2,365	-	RFQ	Ficha técnica	Box	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 600 V	600 V	700mA	150°C	2 V @ 700 mA
CRG04A,LQ(M MOSFET N-CH Toshiba Semiconductor and Storage	2,885	-	RFQ	Ficha técnica	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	5 µA @ 600 V	600 V	1A	150°C	1.1 V @ 1 A
CMS14(TE12L,Q,M) DIODE SCHOTTKY 60V 2A MFLAT Toshiba Semiconductor and Storage	3,147	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 60 V	60 V	2A	-40°C ~ 150°C	580 mV @ 2 A
CMS07(TE12L,Q,M) DIODE SCHOTTKY 30V 2A MFLAT Toshiba Semiconductor and Storage	2,889	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 30 V	30 V	2A	-40°C ~ 150°C	450 mV @ 2 A
CRS10I30C(TE85L,QM DIODE SCHOTTKY 30V 1A S-FLAT Toshiba Semiconductor and Storage	3,750	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	82pF @ 10V, 1MHz	-	100 µA @ 30 V	30 V	1A	150°C (Max)	360 mV @ 1 A
CRS15I30A(TE85L,QM DIODE SCHOTTKY 30V 1.5A S-FLAT Toshiba Semiconductor and Storage	3,011	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	50pF @ 10V, 1MHz	-	60 µA @ 30 V	30 V	1.5A	150°C (Max)	460 mV @ 1.5 A