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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CRS15I30B(TE85L,QMDIODE SCHOTTKY 30V 1.5A S-FLAT Toshiba Semiconductor and Storage |
2,907 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 1.5A | 150°C (Max) | 400 mV @ 1.5 A | |
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CRS15I40A(TE85L,QMDIODE SCHOTTKY 40V 1.5A S-FLAT Toshiba Semiconductor and Storage |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 10V, 1MHz | - | 60 µA @ 40 V | 40 V | 1.5A | 150°C (Max) | 550 mV @ 1.5 A | |
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CMH04(TE12L,Q,M)DIODE GEN PURP 200V 1A MFLAT Toshiba Semiconductor and Storage |
2,619 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
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CMH01(TE12L,Q,M)DIODE GEN PURP 200V 3A M-FLAT Toshiba Semiconductor and Storage |
3,145 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 10 µA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 980 mV @ 3 A | |
|
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CMG03(TE12L,Q,M)DIODE GEN PURP 600V 2A M-FLAT Toshiba Semiconductor and Storage |
2,858 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 2A | -40°C ~ 150°C | 1.1 V @ 2 A | |
|
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CMS08(TE12L,Q,M)DIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 10V, 1MHz | - | 1.5 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 370 mV @ 3 A | |
|
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CMS09(TE12L,Q,M)DIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage |
2,430 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 10V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -40°C ~ 150°C | 450 mV @ 1 A | |
|
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CMF01(TE12L,Q,M)DIODE GEN PURP 600V 2A MFLAT Toshiba Semiconductor and Storage |
3,925 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 2A | -40°C ~ 150°C | 2 V @ 2 A | |
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CRS13(TE85L,Q,M)DIODE SCHOTTKY 60V 1A S-FLAT Toshiba Semiconductor and Storage |
2,327 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 40pF @ 10V, 1MHz | - | 50 µA @ 60 V | 60 V | 1A | 150°C (Max) | 550 mV @ 1 A | |
|
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CRS30I40A(TE85L,QMDIODE SCHOTTKY 40V 3A S-FLAT Toshiba Semiconductor and Storage |
3,223 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 3A | 150°C (Max) | 550 mV @ 3 A | |
|
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CMS10I40A(TE12L,QMDIODE SCHOTTKY 40V 1A M-FLAT Toshiba Semiconductor and Storage |
3,630 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A | 150°C (Max) | 450 mV @ 1 A | |
|
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CMH07(TE12L,Q,M)DIODE GEN PURP 200V 2A M-FLAT Toshiba Semiconductor and Storage |
3,754 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 10 µA @ 200 V | 200 V | 2A | -40°C ~ 150°C | 980 mV @ 2 A | |
|
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CMS20I30A(TE12L,QMDIODE SCHOTTKY 30V 2A M-FLAT Toshiba Semiconductor and Storage |
2,698 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 2A | 150°C (Max) | 450 mV @ 2 A | |
|
1SS404,H3FDIODE SCHOTTKY 20V 300MA USC Toshiba Semiconductor and Storage |
66,705 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 46pF @ 0V, 1MHz | - | 50 µA @ 20 V | 20 V | 300mA | 125°C (Max) | 450 mV @ 300 mA | |
|
1SS406,H3FSMALL SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage |
3,849 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 3.9pF @ 0V, 1MHz | - | 500 nA @ 20 V | 20 V | 50mA | 125°C (Max) | 550 mV @ 50 mA | |
|
TBAS16,LMDIODE GEN PURP 80V 215MA SOT23-3 Toshiba Semiconductor and Storage |
17,073 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 80 V | 215mA | - | - | |
|
1SS193,LFDIODE GEN PURP 80V 100MA SMINI Toshiba Semiconductor and Storage |
15,447 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 80 V | 100mA | 125°C (Max) | 1.2 V @ 100 mA | |
|
1SS416CT,L3FDIODE SCHOTTKY 30V 100MA CST2 Toshiba Semiconductor and Storage |
45,285 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 15pF @ 0V, 1MHz | - | 50 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 500 mV @ 100 mA | |
|
CTS05S30,L3FDIODE SCHOTTKY 30V 500MA CST2 Toshiba Semiconductor and Storage |
16,586 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 55pF @ 0V, 1MHz | - | 150 µA @ 10 V | 30 V | 500mA | 125°C (Max) | 340 mV @ 100 mA | |
|
CUHS20F30,H3FSCHOTTKY BARRIER DIODE, 30V/2A, Toshiba Semiconductor and Storage |
7,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 380pF @ 0V, 1MHz | - | 60 µA @ 30 V | 30 V | 2A | 150°C (Max) | 470 mV @ 2 A |
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