Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA075N15N3

IPA075N15N3

N-CHANNEL POWER MOSFET

Infineon Technologies
491 -

RFQ

IPA075N15N3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK6014DPP-00#T2

RJK6014DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
420 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQP18N50V2

FQP18N50V2

MOSFET N-CH 500V 18A TO220-3

Fairchild Semiconductor
590 -

RFQ

FQP18N50V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ296STL-E

2SJ296STL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
BTS132

BTS132

N-CHANNEL POWER MOSFET

Infineon Technologies
232 -

RFQ

BTS132

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IXTA08N120P

IXTA08N120P

MOSFET N-CH 1200V 800MA TO263

IXYS
2,506 -

RFQ

IXTA08N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 800mA (Tc) 10V 25Ohm @ 500mA, 10V 4.5V @ 50µA 14 nC @ 10 V ±20V 333 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQA35N40

FQA35N40

MOSFET N-CH 400V 35A TO3P

Fairchild Semiconductor
597 -

RFQ

FQA35N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2381

NTE2381

MOSFET P-CHANNEL 500V 2.7A TO220

NTE Electronics, Inc
3,975 -

RFQ

NTE2381

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 85W (Tc) -65°C ~ 150°C Through Hole
IRFP362

IRFP362

N-CHANNEL POWER MOSFET

Harris Corporation
173 -

RFQ

IRFP362

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 20A (Tc) 10V 250mOhm @ 13A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 4000 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1567-E

2SK1567-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
228 -

RFQ

2SK1567-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
GP2T080A120H

GP2T080A120H

SIC MOSFET 1200V 80M TO-247-4L

SemiQ
3,717 -

RFQ

GP2T080A120H

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 61 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH130N15X3

IXFH130N15X3

MOSFET N-CH 150V 130A TO247

IXYS
2,647 -

RFQ

IXFH130N15X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP14N60P

IXTP14N60P

MOSFET N-CH 600V 14A TO220AB

IXYS
3,056 -

RFQ

IXTP14N60P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1636STR-E

2SK1636STR-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
940 -

RFQ

2SK1636STR-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ555-90-E

2SJ555-90-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
347 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFG50N05

RFG50N05

N-CHANNEL POWER MOSFET

Harris Corporation
145 -

RFQ

RFG50N05

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250nA 160 nC @ 20 V ±20V - - 132W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6055VNZ4C13

R6055VNZ4C13

600V 55A TO-247, PRESTOMOS WITH

Rohm Semiconductor
2,179 -

RFQ

R6055VNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V, 15V 71mOhm @ 16A, 15V 6.5V @ 1.5mA 80 nC @ 10 V ±30V 3700 pF @ 100 V - 543W (Tc) 150°C (TJ) Through Hole
IXFT340N075T2

IXFT340N075T2

MOSFET N-CH 75V 340A TO268

IXYS
2,146 -

RFQ

IXFT340N075T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V - 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3415STRR

IRF3415STRR

MOSFET N-CH 150V 43A D2PAK

Infineon Technologies
2,014 -

RFQ

IRF3415STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515STRL

IRF3515STRL

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,846 -

RFQ

IRF3515STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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