Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK2511-A

2SK2511-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
263 -

RFQ

2SK2511-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCH20N60

FCH20N60

MOSFET N-CH 600V 20A TO247-3

Fairchild Semiconductor
838 -

RFQ

FCH20N60

Ficha técnica

Tube SuperFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK6012DPP-K0#T2

RJK6012DPP-K0#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
293 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SIHFPS40N60K-GE3

SIHFPS40N60K-GE3

POWER MOSFET SUPER-247, 130 M @

Vishay Siliconix
100 -

RFQ

SIHFPS40N60K-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP80N075L2

IXTP80N075L2

MOSFET N-CH 75V 80A TO220AB

IXYS
3,608 -

RFQ

IXTP80N075L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 24mOhm @ 40A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 3600 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4144-AZ

2SK4144-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
622 -

RFQ

2SK4144-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXFH74N20P

IXFH74N20P

MOSFET N-CH 200V 74A TO247AD

IXYS
3,551 -

RFQ

IXFH74N20P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 74A (Tc) 10V 34mOhm @ 37A, 10V 5V @ 4mA 107 nC @ 10 V ±20V 3300 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP5645

FDP5645

MOSFET N-CH 60V 80A TO220-3

Fairchild Semiconductor
317 -

RFQ

FDP5645

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 9.5mOhm @ 40A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 4468 pF @ 30 V - 125W (Tc) -65°C ~ 175°C (TJ) Through Hole
IPA60R165CP

IPA60R165CP

MOSFET N-CH 600V 21A TO220

Infineon Technologies
300 -

RFQ

IPA60R165CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK4512DPP-K0#T2

RJK4512DPP-K0#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
730 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK2480-AZ

2SK2480-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
347 -

RFQ

2SK2480-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ330-AZ

2SJ330-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
280 -

RFQ

2SJ330-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ329(05)-S5-AZ

2SJ329(05)-S5-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
499 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
2SK3140-E

2SK3140-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
847 -

RFQ

2SK3140-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFF111

IRFF111

N-CHANNEL POWER MOSFET

Harris Corporation
176 -

RFQ

IRFF111

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 3.5A (Tc) 10V 600mOhm @ 1.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1160-E

2SK1160-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
816 -

RFQ

2SK1160-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ606-ZK-E1-AY

2SJ606-ZK-E1-AY

P-CHANNEL SWITCHING POWER MOSFET

NEC Corporation
800 -

RFQ

2SJ606-ZK-E1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2529-90-E

2SK2529-90-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
557 -

RFQ

2SK2529-90-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2529-E

2SK2529-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
259 -

RFQ

2SK2529-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQA18N50V2

FQA18N50V2

MOSFET N-CH 500V 20A TO3P

Fairchild Semiconductor
380 -

RFQ

FQA18N50V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 265mOhm @ 10A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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