Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQAF90N08

FQAF90N08

MOSFET N-CH 80V 56A TO3PF

Fairchild Semiconductor
340 -

RFQ

FQAF90N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 56A (Tc) 10V 16mOhm @ 28A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1315L-E

2SK1315L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
395 -

RFQ

2SK1315L-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NDP7050L

NDP7050L

MOSFET N-CH 50V 75A TO220-3

Fairchild Semiconductor
252 -

RFQ

NDP7050L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 5V 15mOhm @ 37.5A, 5V 2V @ 250µA 115 nC @ 5 V ±20V 4000 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
IRFP243

IRFP243

N-CHANNEL POWER MOSFET

Harris Corporation
181 -

RFQ

IRFP243

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1275 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ214STL-E

2SJ214STL-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQAF19N60

FQAF19N60

MOSFET N-CH 600V 11.2A TO3PF

Fairchild Semiconductor
681 -

RFQ

FQAF19N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11.2A (Tc) 10V 380mOhm @ 5.6A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDAF59N30

FDAF59N30

MOSFET N-CH 300V 34A TO3PF

Fairchild Semiconductor
178 -

RFQ

FDAF59N30

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 34A (Tc) 10V 56mOhm @ 17A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4670 pF @ 25 V - 161W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2512-AZ

2SK2512-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
927 -

RFQ

2SK2512-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDI047AN08A0

FDI047AN08A0

MOSFET N-CH 75V 80A I2PAK

Fairchild Semiconductor
787 -

RFQ

FDI047AN08A0

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 6V, 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA230N075T2-7

IXFA230N075T2-7

MOSFET N-CH 75V 230A TO263-7

IXYS
3,010 -

RFQ

IXFA230N075T2-7

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 1mA 178 nC @ 10 V - 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOTF42S60L

AOTF42S60L

MOSFET N-CH 600V 39A TO220-3F

Alpha & Omega Semiconductor Inc.
1,077 -

RFQ

AOTF42S60L

Ficha técnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 99mOhm @ 21A, 10V 3.8V @ 250µA 40 nC @ 10 V ±30V 2154 pF @ 100 V - 37.9W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R110CFD

IPI65R110CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
430 -

RFQ

IPI65R110CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQAF15N70

FQAF15N70

MOSFET N-CH 700V 9.5A TO3PF

Fairchild Semiconductor
295 -

RFQ

FQAF15N70

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 9.5A (Tc) 10V 560mOhm @ 4.8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP230N075T2

IXFP230N075T2

MOSFET N-CH 75V 230A TO220AB

IXYS
3,900 -

RFQ

IXFP230N075T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 1mA 178 nC @ 10 V - 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF20N90K5

STF20N90K5

MOSFET N-CH 900V 20A TO220FP

STMicroelectronics
2,842 -

RFQ

STF20N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ328-Z-AZ

2SJ328-Z-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
125 -

RFQ

2SJ328-Z-AZ

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
2SK1094-E

2SK1094-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
663 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1094-93

2SK1094-93

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
206 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQA16N25C

FQA16N25C

MOSFET N-CH 250V 17.8A TO3P

Fairchild Semiconductor
363 -

RFQ

FQA16N25C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 17.8A (Tc) 10V 270mOhm @ 8.9A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3325B-S19-AY

2SK3325B-S19-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
400 -

RFQ

2SK3325B-S19-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 7475767778798081...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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