Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP60N25X3M

IXFP60N25X3M

MOSFET N-CH 250V 60A TO220AB

IXYS
2,974 -

RFQ

IXFP60N25X3M

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT96N15P

IXTT96N15P

MOSFET N-CH 150V 96A TO268

IXYS
3,502 -

RFQ

IXTT96N15P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA75852G3-F085

HUFA75852G3-F085

N-CHANNEL, MOSFET

Fairchild Semiconductor
166 -

RFQ

HUFA75852G3-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 16mOhm @ 75A, 10V 4V @ 250µA 480 nC @ 20 V ±20V 7690 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2956-E

2SK2956-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
333 -

RFQ

2SK2956-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQH90N10V2

FQH90N10V2

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
370 -

RFQ

FQH90N10V2

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 105A (Tc) 10V 10mOhm @ 52.5A, 10V 4V @ 250µA 191 nC @ 10 V ±30V 6150 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA1526H-AZ

UPA1526H-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
109 -

RFQ

UPA1526H-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK1165-E

2SK1165-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
327 -

RFQ

2SK1165-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDB6035L

FDB6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

FDB6035L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1230 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Surface Mount
SPB08N03L

SPB08N03L

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

SPB08N03L

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
RFH30N12

RFH30N12

N-CHANNEL POWER MOSFET

Harris Corporation
268 -

RFQ

RFH30N12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2935-92-E

2SK2935-92-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
258 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXTT26N50P

IXTT26N50P

MOSFET N-CH 500V 26A TO268

IXYS
2,319 -

RFQ

IXTT26N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 250µA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF3805S-7P

AUIRF3805S-7P

AUTOMOTIVE N CHANNEL

International Rectifier
150 -

RFQ

AUIRF3805S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3432-AZ

2SK3432-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
107 -

RFQ

2SK3432-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK3432-Z-AZ

2SK3432-Z-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
101 -

RFQ

2SK3432-Z-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK1290-AZ

2SK1290-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
169 -

RFQ

2SK1290-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2499-Z-AZ

2SK2499-Z-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
655 -

RFQ

2SK2499-Z-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2499-S-AZ

2SK2499-S-AZ

DISCRETE / POWER MOSFET

Renesas Electronics America Inc
559 -

RFQ

2SK2499-S-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK1292(02)-S6-AZ

2SK1292(02)-S6-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
969 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTE67

NTE67

MOSFET N-CHANNEL 400V 4.5A TO220

NTE Electronics, Inc
3,334 -

RFQ

NTE67

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1.5Ohm @ 3A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 780 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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