Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFAF52

IRFAF52

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
172 -

RFQ

IRFAF52

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXFR44N50P

IXFR44N50P

MOSFET N-CH 500V 24A ISOPLUS247

IXYS
2,014 -

RFQ

IXFR44N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 150mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK5020DPK01-E

RJK5020DPK01-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
559 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXTA230N075T2

IXTA230N075T2

MOSFET N-CH 75V 230A TO263

IXYS
150 -

RFQ

IXTA230N075T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTQ110N10P

IXTQ110N10P

MOSFET N-CH 100V 110A TO3P

IXYS
3,427 -

RFQ

IXTQ110N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 15mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQL50N40

FQL50N40

MOSFET N-CH 400V 50A TO264-3

Fairchild Semiconductor
338 -

RFQ

FQL50N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 50A (Tc) 10V 75mOhm @ 25A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 7500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK102N30P

IXTK102N30P

MOSFET N-CH 300V 102A TO264

IXYS
2,165 -

RFQ

IXTK102N30P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 102A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 500µA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R057M1HXKSA1

IMW65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
2,038 -

RFQ

IMW65R057M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT6025BVRG

APT6025BVRG

MOSFET N-CH 600V 25A TO247

Microchip Technology
3,243 -

RFQ

APT6025BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) - 250mOhm @ 500mA, 10V 4V @ 1mA 275 nC @ 10 V - 5160 pF @ 25 V - - - Through Hole
IRF614STRL

IRF614STRL

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
3,646 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614STRR

IRF614STRR

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
2,658 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF620L

IRF620L

MOSFET N-CH 200V 5.2A I2PAK

Vishay Siliconix
2,354 -

RFQ

IRF620L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF620STRL

IRF620STRL

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
3,797 -

RFQ

IRF620STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF620STRR

IRF620STRR

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
3,921 -

RFQ

IRF620STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF624L

IRF624L

MOSFET N-CH 250V 4.4A I2PAK

Vishay Siliconix
2,216 -

RFQ

IRF624L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF624STRL

IRF624STRL

MOSFET N-CH 250V 4.4A D2PAK

Vishay Siliconix
3,315 -

RFQ

IRF624STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF624STRR

IRF624STRR

MOSFET N-CH 250V 4.4A D2PAK

Vishay Siliconix
3,926 -

RFQ

IRF624STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630L

IRF630L

MOSFET N-CH 200V 9A I2PAK

Vishay Siliconix
3,688 -

RFQ

IRF630L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
NTE454

NTE454

MOSFET-DUAL GATE N-CH

NTE Electronics, Inc
3,380 -

RFQ

NTE454

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 20 V 60mA - - - - - 3300 pF @ 15 V Standard 1.2W -65°C ~ 175°C (TJ) Through Hole
2N6760TXV

2N6760TXV

5.5A, 400V, 1OHM, N-CHANNEL

Harris Corporation
471 -

RFQ

2N6760TXV

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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