Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF520NSTRR

IRF520NSTRR

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
3,965 -

RFQ

IRF520NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520S

IRF520S

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,990 -

RFQ

IRF520S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520STRL

IRF520STRL

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,053 -

RFQ

IRF520STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520STRR

IRF520STRR

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,297 -

RFQ

IRF520STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530L

IRF530L

MOSFET N-CH 100V 14A TO262

Vishay Siliconix
2,325 -

RFQ

IRF530L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF530STRL

IRF530STRL

MOSFET N-CH 100V 14A D2PAK

Vishay Siliconix
2,732 -

RFQ

IRF530STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540L

IRF540L

MOSFET N-CH 100V 28A TO262

Vishay Siliconix
2,688 -

RFQ

IRF540L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF610L

IRF610L

MOSFET N-CH 200V 3.3A TO262

Vishay Siliconix
3,241 -

RFQ

IRF610L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF610STRL

IRF610STRL

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix
2,143 -

RFQ

IRF610STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF610STRR

IRF610STRR

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix
2,990 -

RFQ

IRF610STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614L

IRF614L

MOSFET N-CH 250V 2.7A TO262

Vishay Siliconix
2,523 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
FQA15N70

FQA15N70

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
379 -

RFQ

FQA15N70

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 15A (Tc) 10V 560mOhm @ 7.5A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3630 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2387

NTE2387

MOSFET N-CHANNEL 800V 4.1A TO220

NTE Electronics, Inc
2,873 -

RFQ

NTE2387

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQH35N40

FQH35N40

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
846 -

RFQ

FQH35N40

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2372(2)-A

2SK2372(2)-A

DISCRETE / POWER MOSFET

Renesas Electronics America Inc
171 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
APT10M19SVRG

APT10M19SVRG

MOSFET N-CH 100V 75A D3PAK

Microchip Technology
2,536 -

RFQ

APT10M19SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - Surface Mount
2SK3060-Z-E1-AZ

2SK3060-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
1,000 -

RFQ

2SK3060-Z-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2370(2)-A

2SK2370(2)-A

N-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics America Inc
106 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXFT140N20X3HV

IXFT140N20X3HV

MOSFET N-CH 200V 140A TO268HV

IXYS
2,323 -

RFQ

IXFT140N20X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFM10N50

RFM10N50

N-CHANNEL POWER MOSFET

Harris Corporation
143 -

RFQ

RFM10N50

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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