Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ495-S12-AZ

2SJ495-S12-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
989 -

RFQ

2SJ495-S12-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDI038AN06A0_NL

FDI038AN06A0_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
169 -

RFQ

FDI038AN06A0_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3294-AZ

2SK3294-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
119 -

RFQ

2SK3294-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA1556AH(7)-AZ

UPA1556AH(7)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
393 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0701DPP-E0#T2

RJK0701DPP-E0#T2

MOSFET N-CH 75V 100A TO220FP

Renesas Electronics America Inc
347 -

RFQ

RJK0701DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Ta) - 3.8mOhm @ 50A, 10V - 140 nC @ 10 V - 10 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
FCHD040N65S3-F155

FCHD040N65S3-F155

MOSFET N-CH 650V 65A TO247

onsemi
2,501 -

RFQ

FCHD040N65S3-F155

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 4.5V @ 1.7mA 136 nC @ 10 V ±30V 4740 pF @ 400 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP451

IRFP451

N-CHANNEL POWER MOSFET

Harris Corporation
538 -

RFQ

IRFP451

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 14A (Tc) 10V 400mOhm @ 7.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFH10N50

RFH10N50

N-CHANNEL POWER MOSFET

Harris Corporation
302 -

RFQ

RFH10N50

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS112AE3045ANTMA1

BTS112AE3045ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
300 -

RFQ

BTS112AE3045ANTMA1

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
2SK3326(9)AZ

2SK3326(9)AZ

DISCRETE / POWER MOSFET

Renesas Electronics America Inc
379 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
H5N2007FN-E

H5N2007FN-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
466 -

RFQ

H5N2007FN-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDA62N28

FDA62N28

MOSFET N-CH 280V 62A TO3PN

Fairchild Semiconductor
514 -

RFQ

FDA62N28

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 280 V 62A (Tc) 10V 51mOhm @ 31A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4630 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2364(1)-AZ

2SK2364(1)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
253 -

RFQ

2SK2364(1)-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2515-A

2SK2515-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
246 -

RFQ

2SK2515-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF75645S3ST_NL

HUF75645S3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
342 -

RFQ

HUF75645S3ST_NL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75645S3ST_Q

HUF75645S3ST_Q

N CHANNEL ULTRAFET 100V, 75A, 1

Fairchild Semiconductor
308 -

RFQ

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3510-Z-E1-AZ

2SK3510-Z-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

2SK3510-Z-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFP462

IRFP462

N-CHANNEL POWER MOSFET

Harris Corporation
152 -

RFQ

IRFP462

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 11A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4100 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1461

2SK1461

N-CHANNEL POWER MOSFET

onsemi
500 -

RFQ

2SK1461

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF353

IRF353

N-CHANNEL POWER MOSFET

Harris Corporation
460 -

RFQ

IRF353

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 13A (Tc) 10V 400mOhm @ 8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Record«Prev1... 7778798081828384...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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