Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDU8770

FDU8770

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor
7,050 -

RFQ

FDU8770

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 4mOhm @ 35A, 10V 2.5V @ 250µA 73 nC @ 10 V ±20V 3720 pF @ 13 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK974L-E

2SK974L-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc
5,055 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
FDB2570

FDB2570

MOSFET N-CH 150V 22A TO263AB

Fairchild Semiconductor
4,529 -

RFQ

FDB2570

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 22A (Ta) 6V, 10V 80mOhm @ 11A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1911 pF @ 75 V - 93W (Tc) -65°C ~ 175°C (TJ) Surface Mount
2SK974-93L-E

2SK974-93L-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc
2,022 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
STB8N50ET4

STB8N50ET4

NFET D2PAK SPCL 500V TR

onsemi
1,200 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
TPIC5403DW

TPIC5403DW

N-CHANNEL POWER MOSFET

Texas Instruments
778 -

RFQ

TPIC5403DW

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK4007DPP-G2#T2

RJK4007DPP-G2#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
456 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AOTF266L

AOTF266L

MOSFET N-CH 60V 18A/78A TO220-3F

Alpha & Omega Semiconductor Inc.
111 -

RFQ

AOTF266L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 78A (Tc) 6V, 10V 3.5mOhm @ 20A, 10V 3.2V @ 250µA 90 nC @ 10 V ±20V 5650 pF @ 30 V - 2.1W (Ta), 45.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N304AS3ST

ISL9N304AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,660 -

RFQ

ISL9N304AS3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 3V @ 250µA 105 nC @ 10 V ±20V 4075 pF @ 15 V - 145W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF541

IRF541

N-CHANNEL POWER MOSFET

Harris Corporation
4,100 -

RFQ

IRF541

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6507ENXC7G

R6507ENXC7G

650V 7A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6507ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 665mOhm @ 2.4A, 10V 4V @ 200µA 20 nC @ 10 V ±20V 390 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
R6007KNXC7G

R6007KNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
1,000 -

RFQ

R6007KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 620mOhm @ 2.4A, 10V 5V @ 1mA 14.5 nC @ 10 V ±20V 470 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
FDP032N08B-F102

FDP032N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi
177 -

RFQ

FDP032N08B-F102

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.5V @ 250µA 144 nC @ 10 V ±20V 10965 pF @ 40 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3803SPBF

IRL3803SPBF

HEXFET POWER MOSFET

International Rectifier
231 -

RFQ

IRL3803SPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA12N60

FQA12N60

MOSFET N-CH 600V 12A TO3P

Fairchild Semiconductor
9,750 -

RFQ

FQA12N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 700mOhm @ 6A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK4006DPP-G1#T2

RJK4006DPP-G1#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
8,032 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDP2670

FDP2670

MOSFET N-CH 200V 19A TO220-3

Fairchild Semiconductor
6,893 -

RFQ

FDP2670

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19A (Ta) 10V 130mOhm @ 10A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1320 pF @ 100 V - 93W (Tc) -65°C ~ 175°C (TJ) Through Hole
2SK2869-92STR

2SK2869-92STR

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPW12N50C3

SPW12N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,729 -

RFQ

SPW12N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP4N90

FQP4N90

MOSFET N-CH 900V 4.2A TO220-3

Fairchild Semiconductor
2,156 -

RFQ

FQP4N90

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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