Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFD16N03LSM

RFD16N03LSM

N-CHANNEL POWER MOSFET

Harris Corporation
2,057 -

RFQ

RFD16N03LSM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 16A - - - - - - - - - Surface Mount
RFP10P12

RFP10P12

P-CHANNEL POWER MOSFET

Harris Corporation
300 -

RFQ

RFP10P12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Tc) 10V 500mOhm @ 5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP7N35

RFP7N35

N-CHANNEL POWER MOSFET

Harris Corporation
1,200 -

RFQ

RFP7N35

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF211

IRFF211

N-CHANNEL POWER MOSFET

Harris Corporation
1,043 -

RFQ

IRFF211

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2.2A (Tc) 10V 1.5Ohm @ 1.25A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF221

IRFF221

N-CHANNEL POWER MOSFET

Harris Corporation
650 -

RFQ

IRFF221

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Tc) 10V 800mOhm @ 2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S540

RF1S540

28A, 100V, 0.077 OHM, N-CHANNEL

Harris Corporation
4,101 -

RFQ

RF1S540

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76139S3

HUF76139S3

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

HUF76139S3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±16V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFG40N10LE

RFG40N10LE

N-CHANNEL POWER MOSFET

Harris Corporation
489 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFD310

IRFD310

0.4A 400V 3.600 OHM N-CHANNEL

Harris Corporation
3,189 -

RFQ

IRFD310

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RF1S9640

RF1S9640

MOSFET P-CH 200V 11A TO220AB

Harris Corporation
4,500 -

RFQ

RF1S9640

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) - 500mOhm @ 6A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF831

IRF831

N-CHANNEL POWER MOSFET

Harris Corporation
1,610 -

RFQ

IRF831

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP7N40

RFP7N40

N-CHANNEL POWER MOSFET

Harris Corporation
471 -

RFQ

RFP7N40

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP141

IRFP141

N-CHANNEL POWER MOSFET

Harris Corporation
288 -

RFQ

IRFP141

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1275 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPC42

IRFPC42

3.9A, 1000V, 4.2 OHM, N-CHANNEL

Harris Corporation
5,701 -

RFQ

IRFPC42

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 600 V 5.9A (Tc) 10V 1.6Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S40N10SM

RF1S40N10SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,245 -

RFQ

RF1S40N10SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A - - - - - - - - - Surface Mount
IRFPC40

IRFPC40

6.8A 600V 1.200 OHM N-CHANNEL

Harris Corporation
968 -

RFQ

IRFPC40

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP341

IRFP341

N-CHANNEL POWER MOSFET

Harris Corporation
233 -

RFQ

IRFP341

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ41A

BUZ41A

N-CHANNEL POWER MOSFET

Harris Corporation
7,258 -

RFQ

BUZ41A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP70N03

RFP70N03

MOSFET N-CH 30V 70A TO220-3

Harris Corporation
5,567 -

RFQ

RFP70N03

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) - 10mOhm @ 70A, 10V 4V @ 250µA 260 nC @ 20 V - 3300 pF @ 25 V - - - Through Hole
IRF731

IRF731

N-CHANNEL POWER MOSFET

Harris Corporation
4,369 -

RFQ

IRF731

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 395 Record«Prev12345678910...20Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario