Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S45N06LESM

RF1S45N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation
843 -

RFQ

RF1S45N06LESM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A - - - - - - - - - Surface Mount
RF1S50N06LESM

RF1S50N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation
1,705 -

RFQ

RF1S50N06LESM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 5V 22mOhm @ 50A, 5V 2V @ 250µA 120 nC @ 10 V ±10V 2100 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9120

IRFR9120

MOSFET P-CH 100V 5.6A DPAK

Harris Corporation
1,569 -

RFQ

IRFR9120

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD311

IRFD311

N-CHANNEL POWER MOSFET

Harris Corporation
1,332 -

RFQ

IRFD311

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 3.6Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S530

RF1S530

N-CHANNEL POWER MOSFET

Harris Corporation
1,190 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF843

IRF843

N-CHANNEL POWER MOSFET

Harris Corporation
700 -

RFQ

IRF843

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 7A (Tc) 10V 1.1Ohm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF232

IRFF232

N-CHANNEL POWER MOSFET

Harris Corporation
341 -

RFQ

IRFF232

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) - - - - - - - 25W - Through Hole
IRF841

IRF841

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

IRF841

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Tc) 10V 850mOhm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75344S3

HUF75344S3

75A, 55V, 0.008 OHM, N-CHANNEL U

Harris Corporation
678 -

RFQ

HUF75344S3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF741

IRF741

N-CHANNEL POWER MOSFET

Harris Corporation
520 -

RFQ

IRF741

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 10A (Tc) 10V 550mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S50N06

RF1S50N06

50A, 60V, 0.022 OHM, N-CHANNEL

Harris Corporation
2,746 -

RFQ

RF1S50N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S630SM

RF1S630SM

N-CHANNEL POWER MOSFET

Harris Corporation
2,098 -

RFQ

RF1S630SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF647

IRF647

N-CHANNEL POWER MOSFET

Harris Corporation
1,595 -

RFQ

IRF647

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 13A (Tc) 10V 340mOhm @ 8A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF1S9630SM

RF1S9630SM

P-CHANNEL POWER MOSFET

Harris Corporation
1,650 -

RFQ

RF1S9630SM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A - - - - - - - - - Surface Mount
RF1S50N06LE

RF1S50N06LE

N-CHANNEL POWER MOSFET

Harris Corporation
4,042 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RF1S630SM9A

RF1S630SM9A

N-CHANNEL POWER MOSFET

Harris Corporation
4,000 -

RFQ

RF1S630SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFG45N06

RFG45N06

N-CHANNEL POWER MOSFET

Harris Corporation
2,175 -

RFQ

RFG45N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 28mOhm @ 45A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2050 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP18N08

RFP18N08

N-CHANNEL, MOSFET

Harris Corporation
4,075 -

RFQ

RFP18N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Tc) 10V 100mOhm @ 9A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFL4N15

RFL4N15

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
1,482 -

RFQ

RFL4N15

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 400mOhm @ 2A, 10V 4V @ 1mA - ±20V 850 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP17N06L

RFP17N06L

N-CHANNEL, MOSFET

Harris Corporation
2,275 -

RFQ

RFP17N06L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 130mOhm @ 17A, 5V 2V @ 1mA 45 nC @ 30 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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