Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF620

IRF620

5.0A 200V 0.800 OHM N-CHANNEL

Harris Corporation
3,490 -

RFQ

IRF620

Ficha técnica

Bulk PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 800mOhm @ 3A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 70W (Tc) -65°C ~ 150°C (TJ) Through Hole
HUF75309D3

HUF75309D3

N-CHANNEL POWER MOSFET

Harris Corporation
2,082 -

RFQ

HUF75309D3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) - 70mOhm @ 17A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF623

IRF623

N-CHANNEL POWER MOSFET

Harris Corporation
3,564 -

RFQ

IRF623

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 1.2Ohm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD14N05L

RFD14N05L

MOSFET N-CH 50V 14A IPAK

Harris Corporation
3,529 -

RFQ

RFD14N05L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 5V 100mOhm @ 14A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 670 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75307D3ST

HUF75307D3ST

MOSFET N-CH 55V 15A TO252

Harris Corporation
3,201 -

RFQ

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) - 90mOhm @ 13A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF821

IRF821

N-CHANNEL POWER MOSFET

Harris Corporation
2,280 -

RFQ

IRF821

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF614

IRF614

ADVANCED POWER MOSFET

Harris Corporation
2,943 -

RFQ

IRF614

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF822R

IRF822R

N-CHANNEL POWER MOSFET

Harris Corporation
2,771 -

RFQ

IRF822R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP4N35

RFP4N35

N-CHANNEL POWER MOSFET

Harris Corporation
3,485 -

RFQ

RFP4N35

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF712R

IRF712R

N-CHANNEL POWER MOSFET

Harris Corporation
2,784 -

RFQ

IRF712R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 5Ohm @1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU420

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Harris Corporation
3,769 -

RFQ

IRFU420

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) - 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF530

IRF530

MOSFET N-CH 100V 14A TO220AB

Harris Corporation
3,590 -

RFQ

IRF530

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) - 180mOhm @ 8A, 10V 4V @ 250µA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP3N45

RFP3N45

N-CHANNEL POWER MOSFET

Harris Corporation
3,942 -

RFQ

RFP3N45

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 3A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP4N40

RFP4N40

N-CHANNEL POWER MOSFET

Harris Corporation
3,151 -

RFQ

RFP4N40

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF323

IRFF323

N-CHANNEL POWER MOSFET

Harris Corporation
3,194 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFF321

IRFF321

N-CHANNEL POWER MOSFET

Harris Corporation
3,096 -

RFQ

IRFF321

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 2.5A (Tc) 10V 1.8Ohm @ 1.25A, 10V 4V @ 250µA 15 nC @ 10 V 20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR220

IRFR220

MOSFET N-CH 200V 4.6A TO252AA

Harris Corporation
2,773 -

RFQ

IRFR220

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) - 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF611

IRF611

N-CHANNEL POWER MOSFET

Harris Corporation
3,375 -

RFQ

IRF611

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3.3A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ32

BUZ32

MOSFET N-CH 200V 9.5A TO220AB

Harris Corporation
3,991 -

RFQ

BUZ32

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) - 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9531

IRF9531

MOSFET P-CH 60V 12A TO220AB

Harris Corporation
2,751 -

RFQ

IRF9531

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A - - - - ±320V - - 75W -55°C ~ 150°C Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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