Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S17N06LSM

RF1S17N06LSM

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation
4,000 -

RFQ

RF1S17N06LSM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 17A - - - - - - - - - Surface Mount
RF1S25N06SM

RF1S25N06SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,005 -

RFQ

RF1S25N06SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 25A - - - - - - - - - Surface Mount
IRF9510

IRF9510

MOSFET P-CH 100V 4A TO220AB

Harris Corporation
2,685 -

RFQ

IRF9510

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N03LSM9A

RFD16N03LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
1,540 -

RFQ

RFD16N03LSM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S15N08L

RF1S15N08L

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation
800 -

RFQ

RF1S15N08L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 45A - - - - - - - - - Surface Mount
IRFR9110

IRFR9110

MOSFET P-CH 100V 3.1A DPAK

Harris Corporation
554 -

RFQ

IRFR9110

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) - 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFP2N15

RFP2N15

N-CHANNEL, MOSFET

Harris Corporation
2,411 -

RFQ

RFP2N15

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S25N06SM9A

RF1S25N06SM9A

N-CHANNEL POWER MOSFET

Harris Corporation
4,000 -

RFQ

RF1S25N06SM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S23N06LESM9A

RF1S23N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

RF1S23N06LESM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFP45N06LE

RFP45N06LE

N-CHANNEL POWER MOSFET

Harris Corporation
1,569 -

RFQ

RFP45N06LE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 5V 28mOhm @ 45A, 5V 2V @ 250µA 135 nC @ 10 V ±10V 2150 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S23N06LE

RF1S23N06LE

23A, 60V, 0.065OHM, N-CHANNEL

Harris Corporation
2,400 -

RFQ

RF1S23N06LE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 5V 65mOhm @ 23A, 5V 2V @ 250µA 48 nC @ 10 V ±10V 850 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ)
IRF643

IRF643

N-CHANNEL POWER MOSFET

Harris Corporation
3,050 -

RFQ

IRF643

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF543

IRF543

N-CHANNEL POWER MOSFET

Harris Corporation
965 -

RFQ

IRF543

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF631

IRF631

N-CHANNEL POWER MOSFET

Harris Corporation
5,221 -

RFQ

IRF631

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S22N10SM

RF1S22N10SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,853 -

RFQ

RF1S22N10SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 22A - - - - - - - - - Surface Mount
IRF9522

IRF9522

P-CHANNEL POWER MOSFET

Harris Corporation
1,768 -

RFQ

IRF9522

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 5A (Tc) 10V 800mOhm @ 3.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RLD03N06CLESM

RLD03N06CLESM

N-CHANNEL POWER MOSFET

Harris Corporation
1,025 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFD20N03SM9A

RFD20N03SM9A

N-CHANNEL POWER MOSFET

Harris Corporation
4,911 -

RFQ

RFD20N03SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S42N03L

RF1S42N03L

42A, 30V, 0.025 OHMS, N-CHANNEL

Harris Corporation
400 -

RFQ

RF1S42N03L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 5V 25mOhm @ 42A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF642

IRF642

N-CHANNEL POWER MOSFET

Harris Corporation
6,533 -

RFQ

IRF642

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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