Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76121S3

HUF76121S3

N-CHANNEL POWER MOSFET

Harris Corporation
3,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF711

IRF711

N-CHANNEL POWER MOSFET

Harris Corporation
6,031 -

RFQ

IRF711

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD7N10LE

RFD7N10LE

N-CHANNEL POWER MOSFET

Harris Corporation
5,942 -

RFQ

RFD7N10LE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Tc) 5V 300mOhm @ 7A, 5V 2V @ 250µA 150 nC @ 10 V +10V, -8V 360 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
RLD03N06CLESM9A

RLD03N06CLESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFP45N02L

RFP45N02L

N-CHANNEL POWER MOSFET

Harris Corporation
1,871 -

RFQ

RFP45N02L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 15 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N02L

RFD16N02L

16A, 20V, 0.022 OHM, N-CHANNEL L

Harris Corporation
1,793 -

RFQ

RFD16N02L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 5V 22mOhm @ 16A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 20 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S15N06SM

RF1S15N06SM

N-CHANNEL POWER MOSFET

Harris Corporation
4,894 -

RFQ

RF1S15N06SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - Surface Mount
RF1S45N02LSM

RF1S45N02LSM

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

RF1S45N02LSM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A - - - - - - - - - Surface Mount
RF1S45N02LSM9A

RF1S45N02LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,400 -

RFQ

RF1S45N02LSM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFD220

IRFD220

0.8A 200V 0.800 OHM N-CHANNEL

Harris Corporation
913 -

RFQ

IRFD220

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 800mA (Ta) 10V 800mOhm @ 480mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF9512

IRF9512

P-CHANNEL POWER MOSFET

Harris Corporation
4,210 -

RFQ

IRF9512

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 2.5A (Tc) 10V 1.6Ohm @ 1.5A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S45N02L

RF1S45N02L

45A, 20V, 0.022OHM, N-CHANNEL LO

Harris Corporation
999 -

RFQ

RF1S45N02L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 15 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP4N05

RFP4N05

N-CHANNEL POWER MOSFET

Harris Corporation
6,728 -

RFQ

RFP4N05

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP8N20

RFP8N20

N-CHANNEL POWER MOSFET

Harris Corporation
2,366 -

RFQ

RFP8N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF626

IRF626

N-CHANNEL POWER MOSFET

Harris Corporation
997 -

RFQ

IRF626

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 3.8A (Tc) 10V 1.1Ohm @ 1.4A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 340 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP2N20

RFP2N20

N-CHANNEL, MOSFET

Harris Corporation
1,552 -

RFQ

RFP2N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3.5Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ76

BUZ76

N-CHANNEL POWER MOSFET

Harris Corporation
700 -

RFQ

BUZ76

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 1mA - ±20V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD14N06

RFD14N06

N-CHANNEL POWER MOSFET

Harris Corporation
3,664 -

RFQ

RFD14N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD213

IRFD213

MOSFET N-CH 250V 450MA 4DIP

Harris Corporation
5,563 -

RFQ

IRFD213

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
RF1S23N06LESM

RF1S23N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation
5,549 -

RFQ

RF1S23N06LESM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 23A - - - - - - - - - Surface Mount
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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