Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S22N10

RF1S22N10

N-CHANNEL POWER MOSFET

Harris Corporation
1,990 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFL1N12

RFL1N12

N-CHANNEL POWER MOSFET

Harris Corporation
845 -

RFQ

RFL1N12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR420

IRFR420

2.5A 500V 3.000 OHM N-CHANNEL

Harris Corporation
779 -

RFQ

IRFR420

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF642R

IRF642R

N-CHANNEL POWER MOSFET

Harris Corporation
500 -

RFQ

IRF642R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S45N03L

RF1S45N03L

N-CHANNEL POWER MOSFET

Harris Corporation
770 -

RFQ

RF1S45N03L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S9630

RF1S9630

P-CHANNEL POWER MOSFET

Harris Corporation
2,400 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFP12N18

RFP12N18

N-CHANNEL POWER MOSFET

Harris Corporation
1,550 -

RFQ

RFP12N18

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 180 V 12A (Tc) 10V 250mOhm @ 12A, 10V 4V @ 250µA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD210

IRFD210

0.6A 200V 1.500 OHM N-CHANNEL

Harris Corporation
1,014 -

RFQ

IRFD210

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RFD8P05SM9A

RFD8P05SM9A

P-CHANNEL POWER MOSFET

Harris Corporation
3,171 -

RFQ

RFD8P05SM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFD313

IRFD313

N-CHANNEL POWER MOSFET

Harris Corporation
900 -

RFQ

IRFD313

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 300mA (Tc) 10V 5Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S45N06SM

RF1S45N06SM

N-CHANNEL POWER MOSFET

Harris Corporation
700 -

RFQ

RF1S45N06SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A - - - - - - - - - Surface Mount
HUF75332P3

HUF75332P3

MOSFET N-CH 55V 60A TO220-3

Harris Corporation
9,713 -

RFQ

HUF75332P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S45N06LESM9A

RF1S45N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
1,600 -

RFQ

RF1S45N06LESM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF231

IRF231

N-CHANNEL POWER MOSFET

Harris Corporation
1,234 -

RFQ

IRF231

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9543

IRF9543

P-CHANNEL POWER MOSFET

Harris Corporation
430 -

RFQ

IRF9543

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 15A (Tc) 10V 300mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9520

IRF9520

MOSFET P-CH 100V 6A TO220AB

Harris Corporation
8,668 -

RFQ

IRF9520

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) - 600mOhm @ 3.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HRF3205L

HRF3205L

100A 55V 0.008 OHM N-CHANNEL

Harris Corporation
2,210 -

RFQ

HRF3205L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBC42

IRFBC42

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFBC42

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Tc) 10V 1.6Ohm @ 3.4A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFM3N45

RFM3N45

N-CHANNEL POWER MOSFET

Harris Corporation
1,840 -

RFQ

RFM3N45

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 3A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S45N06LE

RF1S45N06LE

45A, 60V, 0.028OHM, N-CHANNEL

Harris Corporation
1,530 -

RFQ

RF1S45N06LE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 5V 28mOhm @ 45A, 5V 2V @ 250µA 135 nC @ 10 V ±10V 2150 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ)
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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