Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1K49211

RF1K49211

N-CHANNEL POWER MOSFET

Harris Corporation
1,588 -

RFQ

RF1K49211

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 12 V 7A - - - - - - - - - Surface Mount
IRFU322

IRFU322

N-CHANNEL POWER MOSFET

Harris Corporation
898 -

RFQ

IRFU322

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Ta) 10V 2.5Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD20N03SM

RFD20N03SM

N-CHANNEL POWER MOSFET

Harris Corporation
8,441 -

RFQ

RFD20N03SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF621R

IRF621R

N-CHANNEL POWER MOSFET

Harris Corporation
6,837 -

RFQ

IRF621R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD15N06LESM

RFD15N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation
4,077 -

RFQ

RFD15N06LESM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - Surface Mount
IRFU221

IRFU221

N-CHANNEL POWER MOSFET

Harris Corporation
2,419 -

RFQ

IRFU221

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR222

IRFR222

N-CHANNEL POWER MOSFET

Harris Corporation
944 -

RFQ

IRFR222

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU222

IRFU222

N-CHANNEL POWER MOSFET

Harris Corporation
900 -

RFQ

IRFU222

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU421

IRFU421

N-CHANNEL POWER MOSFET

Harris Corporation
900 -

RFQ

IRFU421

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75332S3S

HUF75332S3S

N-CHANNEL POWER MOSFET

Harris Corporation
2,788 -

RFQ

HUF75332S3S

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 10V 19mOhm @ 52A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF823

IRF823

N-CHANNEL POWER MOSFET

Harris Corporation
2,284 -

RFQ

IRF823

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP23N06LE

RFP23N06LE

N-CHANNEL, MOSFET

Harris Corporation
1,486 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF9622

IRF9622

P-CHANNEL POWER MOSFET

Harris Corporation
1,128 -

RFQ

IRF9622

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 2.4Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR221

IRFR221

N-CHANNEL POWER MOSFET

Harris Corporation
1,075 -

RFQ

IRFR221

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR421

IRFR421

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFR421

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU422

IRFU422

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFU422

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RLP03N06CLE

RLP03N06CLE

N-CHANNEL POWER MOSFET

Harris Corporation
3,673 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF512

IRF512

N-CHANNEL POWER MOSFET

Harris Corporation
1,663 -

RFQ

IRF512

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 740mOhm @ 3.4A, 10V 4V @ 250µA 7.7 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP2N12

RFP2N12

N-CHANNEL, MOSFET

Harris Corporation
1,550 -

RFQ

RFP2N12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR422

IRFR422

N-CHANNEL POWER MOSFET

Harris Corporation
1,139 -

RFQ

IRFR422

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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