Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3303TRPBF

IRFR3303TRPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,709 -

RFQ

IRFR3303TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3206TRL

AUIRFS3206TRL

AUTOMOTIVE POWER MOSFET

International Rectifier
3,221 -

RFQ

AUIRFS3206TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFN8401TR

AUIRFN8401TR

AUTOMOTIVE HEXFET POWER MOSFET

International Rectifier
2,311 -

RFQ

AUIRFN8401TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR825PBF

IRFR825PBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
3,894 -

RFQ

IRFR825PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.3Ohm @ 3.7A, 10V 5V @ 250µA 34 nC @ 10 V ±20V 1346 pF @ 25 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR7540TRLPBF

IRFR7540TRLPBF

HEXFET POWER MOSFET

International Rectifier
2,537 -

RFQ

IRFR7540TRLPBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7468TRPBF

IRF7468TRPBF

SMPS HEXFET POWER MOSFET

International Rectifier
2,904 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V 2V @ 250µA 34 nC @ 4.5 V ±12V 2460 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7488TRPBF

IRF7488TRPBF

POWER FIELD-EFFECT TRANSISTOR, 6

International Rectifier
2,441 -

RFQ

IRF7488TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807VPBF

IRF7807VPBF

HEXFET POWER MOSFET

International Rectifier
3,492 -

RFQ

IRF7807VPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 5 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU3915PBF

IRLU3915PBF

IRLU3915 - HEXFET POWER MOSFET

International Rectifier
2,138 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPS3810PBF

IRFPS3810PBF

MOSFET N-CH 100V 170A SUPER-247

International Rectifier
2,214 -

RFQ

IRFPS3810PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) - 9mOhm @ 100A, 10V 5V @ 250µA 390 nC @ 10 V ±30V 6790 pF @ 25 V - 580W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR1010Z

AUIRFR1010Z

AUTOMOTIVE N CHANNEL

International Rectifier
2,656 -

RFQ

AUIRFR1010Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010ZSPBF

IRF1010ZSPBF

MOSFET N-CH 55V 75A D2PAK

International Rectifier
2,636 -

RFQ

IRF1010ZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8707PBF

IRF8707PBF

MOSFET N-CH 30V 11A 8SO

International Rectifier
3,156 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) - 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR120NPBF

IRLR120NPBF

HEXFET POWER MOSFET

International Rectifier
3,303 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB23N15DPBF

IRFB23N15DPBF

IRFB23N15 - SMPS HEXFET POWER MO

International Rectifier
3,048 -

RFQ

IRFB23N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR7843PBF

IRLR7843PBF

HEXFET POWER MOSFET

International Rectifier
3,329 -

RFQ

IRLR7843PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR18N15DTRPBF

IRFR18N15DTRPBF

MOSFET N-CH 150V 18A DPAK

International Rectifier
3,504 -

RFQ

IRFR18N15DTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4104PBF

IRFR4104PBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
3,530 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7437-7PPBF

IRFS7437-7PPBF

MOSFET N-CH 40V 195A D2PAK

International Rectifier
3,138 -

RFQ

IRFS7437-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.4mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7787PBF

IRFS7787PBF

MOSFET N-CH 75V 76A TO263-3-2

International Rectifier
3,103 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) - 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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