Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR3636

AUIRLR3636

MOSFET N-CH 60V 50A DPAK

International Rectifier
2,979 -

RFQ

AUIRLR3636

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6201PBF

IRF6201PBF

HEXFET POWER MOSFET

International Rectifier
3,178 -

RFQ

IRF6201PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta) 2.5V, 4.5V 2.45mOhm @ 27A, 4.5V 1.1V @ 100µA 195 nC @ 4.5 V ±12V 8555 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF1404STRRPBF

IRF1404STRRPBF

HEXFET POWER MOSFET

International Rectifier
3,527 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315SPBF

IRF3315SPBF

HEXFET POWER MOSFET

International Rectifier
3,282 -

RFQ

IRF3315SPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708PBF

IRF3708PBF

HEXFET SMPS POWER MOSFET

International Rectifier
2,640 -

RFQ

IRF3708PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3110Z

AUIRLR3110Z

MOSFET N-CH 100V 42A DPAK

International Rectifier
3,971 -

RFQ

AUIRLR3110Z

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1324STRL-7PP

IRF1324STRL-7PP

MOSFET N-CH 24V 240A D2PAK

International Rectifier
2,002 -

RFQ

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) - 1mOhm @ 160A, 10V 4V @ 250µA 252 nC @ 10 V ±20V 7700 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR2905TRL

AUIRLR2905TRL

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
2,318 -

RFQ

AUIRLR2905TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710ZLPBF

IRF3710ZLPBF

HEXFET POWER MOSFET

International Rectifier
2,867 -

RFQ

IRF3710ZLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLU2905

AUIRLU2905

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
3,101 -

RFQ

AUIRLU2905

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103PBF

IRL3103PBF

HEXFET POWER MOSFET

International Rectifier
3,226 -

RFQ

IRL3103PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2203NPBF

IRL2203NPBF

HEXFET POWER MOSFET

International Rectifier
3,414 -

RFQ

IRL2203NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR6225PBF

IRLR6225PBF

MOSFET N-CH 20V 100A DPAK

International Rectifier
2,712 -

RFQ

IRLR6225PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) - 4mOhm @ 21A, 4.5V 1.1V @ 50µA 72 nC @ 4.5 V ±12V 3770 pF @ 10 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50N04S308ATMA1

IPD50N04S308ATMA1

OPTLMOS N-CHANNEL POWER MOSFET

International Rectifier
3,387 -

RFQ

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3802TRPBF

IRLR3802TRPBF

IRLR3802 - HEXFET POWER MOSFET

International Rectifier
3,831 -

RFQ

IRLR3802TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB23N20DPBF

IRFB23N20DPBF

SMPS HEXFET POWER MOSFET

International Rectifier
2,759 -

RFQ

IRFB23N20DPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR8729TRLPBF

IRLR8729TRLPBF

IRLR8729 - 20V-30V N-CHANNEL

International Rectifier
2,305 -

RFQ

IRLR8729TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

PFET, 240A I(D), 40V, 0.0016OHM

International Rectifier
3,246 -

RFQ

AUIRF2804S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ)
IRFL4315PBF

IRFL4315PBF

HEXFET POWER MOSFET

International Rectifier
2,838 -

RFQ

IRFL4315PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Ta) 10V 185mOhm @ 1.6A, 10V 5V @ 250µA 19 nC @ 10 V ±30V 420 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFB3806

AUIRFB3806

AUTOMOTIVE N CHANNEL

International Rectifier
2,245 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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