Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFH7188TRPBF

IRFH7188TRPBF

MOSFET N-CH 100V 18A/105A PQFN

International Rectifier
2,941 -

RFQ

IRFH7188TRPBF

Ficha técnica

Bulk FASTIRFET™, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Ta), 105A (Tc) 10V 6mOhm @ 50A, 10V 3.9V @ 150µA 50 nC @ 10 V ±20V 2116 pF @ 50 V - 3.8W (Ta), 132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4420DYPBF

SI4420DYPBF

HEXFET POWER MOSFET

International Rectifier
3,558 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 78 nC @ 10 V ±20V 2240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU2607ZPBF

IRFU2607ZPBF

MOSFET N-CH 75V 42A IPAK

International Rectifier
2,363 -

RFQ

IRFU2607ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR120NPBF

IRFR120NPBF

MOSFET N-CH 100V 9.4A DPAK

International Rectifier
3,797 -

RFQ

IRFR120NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3306PBF

IRFS3306PBF

MOSFET N-CH 60V 120A D2PAK

International Rectifier
2,676 -

RFQ

IRFS3306PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8714PBF

IRF8714PBF

MOSFET N-CH 30V 14A 8SO

International Rectifier
3,147 -

RFQ

IRF8714PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH5007TR2PBF

IRFH5007TR2PBF

MOSFET N-CH 75V 17A/100A 8PQFN

International Rectifier
2,216 -

RFQ

IRFH5007TR2PBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 17A (Ta), 100A (Tc) - 5.9mOhm @ 50A, 10V 4V @ 150µA 98 nC @ 10 V - 4290 pF @ 25 V - - - Surface Mount
IRFS4615PBF

IRFS4615PBF

MOSFET N-CH 150V 33A D2PAK

International Rectifier
3,473 -

RFQ

IRFS4615PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZSPBF

IRL3714ZSPBF

MOSFET N-CH 20V 36A D2PAK

International Rectifier
2,895 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N6755

2N6755

N-CHANNEL POWER MOSFET

International Rectifier
2,946 -

RFQ

2N6755

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRLS4030-7P

AUIRLS4030-7P

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
3,216 -

RFQ

AUIRLS4030-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3105

AUIRLR3105

MOSFET N-CH 55V 25A DPAK

International Rectifier
2,197 -

RFQ

AUIRLR3105

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) - 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±16V 710 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR2908TRL

AUIRLR2908TRL

AUTOMOTIVE POWER MOSFET

International Rectifier
2,810 -

RFQ

AUIRLR2908TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) - 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V - 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR2905

AUIRLR2905

MOSFET N-CH 55V 42A DPAK

International Rectifier
3,610 -

RFQ

AUIRLR2905

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR120N

AUIRLR120N

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
3,257 -

RFQ

AUIRLR120N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709STRLPBF

IRF3709STRLPBF

HEXFET SMPS POWER MOSFET

International Rectifier
3,883 -

RFQ

IRF3709STRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF5805TRPBF

IRF5805TRPBF

IRF5805 - TRANSISTOR

International Rectifier
3,537 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 511 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF2907ZSPBF

IRF2907ZSPBF

MOSFET N-CH 75V 160A D2PAK

International Rectifier
2,228 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) - 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6218PBF

IRF6218PBF

AUTOMOTIVE HEXFET P-CHANNEL

International Rectifier
3,579 -

RFQ

IRF6218PBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1607PBF

IRF1607PBF

MOSFET N-CH 75V 142A TO220AB

International Rectifier
2,394 -

RFQ

IRF1607PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 142A (Tc) - 7.5mOhm @ 85A, 10V 4V @ 250µA 320 nC @ 10 V ±20V 7750 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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