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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK3R2A08QM,S4X

TK3R2A08QM,S4X

UMOS10 TO-220SIS 80V 3.2MOHM

Toshiba Semiconductor and Storage 		2,904 -

RFQ

TK3R2A08QM,S4X

Ficha técnica

 Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 92A (Tc) 6V, 10V 3.2mOhm @ 46A, 10V 3.5V @ 1.3mA 102 nC @ 10 V ±20V 7670 pF @ 40 V - 45W (Tc) 175°C Through Hole
XK1R9F10QB,LXGQ

XK1R9F10QB,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage 		4,952 -

RFQ

XK1R9F10QB,LXGQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 1.92mOhm @ 80A, 10V 3.5V @ 1mA 184 nC @ 10 V ±20V 11500 pF @ 10 V - 375W (Tc) 175°C Surface Mount
SSM3K341R,LXHF

SSM3K341R,LXHF

AECQ MOSFET NCH 60V 6A SOT23F

Toshiba Semiconductor and Storage 		3,790 -

RFQ

SSM3K341R,LXHF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 5A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.2W (Ta) 175°C Surface Mount
TK2R4E08QM,S1X

TK2R4E08QM,S1X

UMOS10 TO-220AB 80V 2.4MOHM

Toshiba Semiconductor and Storage 		2,208 -

RFQ

TK2R4E08QM,S1X

Ficha técnica

 Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 178 nC @ 10 V ±20V 13000 pF @ 40 V - 300W (Tc) 175°C Through Hole
TK6R7P06PL,RQ

TK6R7P06PL,RQ

MOSFET N-CHANNEL 60V 46A DPAK

Toshiba Semiconductor and Storage 		2,459 -

RFQ

TK6R7P06PL,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 4.5V, 10V 6.7mOhm @ 23A, 10V 2.5V @ 300µA 26 nC @ 10 V ±20V 1990 pF @ 30 V - 66W (Tc) 175°C Surface Mount
TPCA8052-H(T2L1,VM

TPCA8052-H(T2L1,VM

MOSFET N-CH 40V 20A 8SOP

Toshiba Semiconductor and Storage 		9,995 -

RFQ

TPCA8052-H(T2L1,VM

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 4.5V, 10V 11.3mOhm @ 10A, 10V 2.3V @ 200µA 25 nC @ 10 V ±20V 2110 pF @ 10 V - 1.6W (Ta), 30W (Tc) 150°C Surface Mount
TK3R1P04PL,RQ

TK3R1P04PL,RQ

MOSFET N-CHANNEL 40V 58A DPAK

Toshiba Semiconductor and Storage 		19,509 -

RFQ

TK3R1P04PL,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) 4.5V, 10V 3.1mOhm @ 29A, 10V 2.4V @ 500µA 60 nC @ 10 V ±20V 4670 pF @ 20 V - 87W (Tc) 175°C Surface Mount
TK14C65W,S1Q

TK14C65W,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage 		3,993 -

RFQ

TK14C65W,S1Q

Ficha técnica

 Tube DTMOSIV Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK14C65W5,S1Q

TK14C65W5,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Toshiba Semiconductor and Storage 		3,157 -

RFQ

TK14C65W5,S1Q

Ficha técnica

 Tube DTMOSIV Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TPHR9003NL1,LQ

TPHR9003NL1,LQ

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

Toshiba Semiconductor and Storage 		14,367 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 800mW (Ta), 170W (Tc) 150°C Surface Mount
TPH2R608NH,L1Q

TPH2R608NH,L1Q

MOSFET N-CH 75V 150A 8SOP

Toshiba Semiconductor and Storage 		69,968 -

RFQ

TPH2R608NH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Tc) 10V 2.6mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 142W (Tc) 150°C (TJ) Surface Mount
TK10A60E,S5X

TK10A60E,S5X

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage 		2,513 -

RFQ

TK10A60E,S5X

Ficha técnica

 Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 1300 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK12A50E,S5X

TK12A50E,S5X

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage 		2,061 -

RFQ

TK12A50E,S5X

Ficha técnica

 Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1.2mA 40 nC @ 10 V ±30V 1300 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK65G10N1,RQ

TK65G10N1,RQ

MOSFET N-CH 100V 65A D2PAK

Toshiba Semiconductor and Storage 		2,767 -

RFQ

TK65G10N1,RQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Obsolete N-Channel MOSFET (Metal Oxide) 100 V 65A (Ta) 10V 4.5mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 156W (Tc) 150°C (TJ) Surface Mount
SSM3K7002KF,LF

SSM3K7002KF,LF

MOSFET N-CH 60V 400MA S-MINI

Toshiba Semiconductor and Storage 		26,665 -

RFQ

SSM3K7002KF,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 270mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK110A65Z,S4X

TK110A65Z,S4X

MOSFET N-CH 650V 24A TO220SIS

Toshiba Semiconductor and Storage 		2,899 -

RFQ

TK110A65Z,S4X

Ficha técnica

 Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK110E65Z,S1X

TK110E65Z,S1X

650V DTMOS VI TO-220 110MOHM

Toshiba Semiconductor and Storage 		3,282 -

RFQ

TK110E65Z,S1X

Ficha técnica

 Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
TPW1R005PL,L1Q

TPW1R005PL,L1Q

MOSFET N-CH 45V 300A 8DSOP

Toshiba Semiconductor and Storage 		8,837 -

RFQ

TPW1R005PL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 45 V 300A (Tc) 4.5V, 10V - 2.4V @ 1mA 122 nC @ 10 V ±20V 9600 pF @ 22.5 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
SSM3K376R,LF

SSM3K376R,LF

MOSFET N-CH 30V 4A SOT23F

Toshiba Semiconductor and Storage 		12,337 -

RFQ

SSM3K376R,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 4.5V 56mOhm @ 2A, 4.5V 1V @ 1mA 2.2 nC @ 4.5 V +12V, -8V 200 pF @ 10 V - 2W (Ta) 150°C Surface Mount
SSM3J331R,LF

SSM3J331R,LF

MOSFET P-CH 20V 4A SOT23F

Toshiba Semiconductor and Storage 		12,558 -

RFQ

SSM3J331R,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 55mOhm @ 3A, 4.5V 1V @ 1mA 10.4 nC @ 4.5 V ±8V 630 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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