Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK090A65Z,S4X

TK090A65Z,S4X

MOSFET N-CH 650V 30A TO220SIS

Toshiba Semiconductor and Storage
2,537 -

RFQ

TK090A65Z,S4X

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 45W (Tc) 150°C Through Hole
SSM6K411TU(TE85L,F

SSM6K411TU(TE85L,F

MOSFET N-CH 20V 10A UF6

Toshiba Semiconductor and Storage
2,560 -

RFQ

SSM6K411TU(TE85L,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 12mOhm @ 7A, 4.5V 1.2V @ 1mA 9.4 nC @ 4.5 V ±12V 710 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3K37CT,L3F

SSM3K37CT,L3F

MOSFET N-CH 20V 200MA CST3

Toshiba Semiconductor and Storage
2,954 -

RFQ

SSM3K37CT,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - ±10V 12 pF @ 10 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J15CT,L3F

SSM3J15CT,L3F

SMALL LOW RON PCH MOSFETS VDSS:-

Toshiba Semiconductor and Storage
2,727 -

RFQ

SSM3J15CT,L3F

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.7V @ 100µA - ±20V 9.1 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
SSM3K16CTC,L3F

SSM3K16CTC,L3F

MOSFET N-CH 20V 200MA CST3C

Toshiba Semiconductor and Storage
3,853 -

RFQ

SSM3K16CTC,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - ±10V 12 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3K16FS,LF

SSM3K16FS,LF

SMALL LOW ON RESISTANCE NCH MOSF

Toshiba Semiconductor and Storage
3,138 -

RFQ

SSM3K16FS,LF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 3Ohm @ 10mA, 4V 1.1V @ 100µA - ±10V 9.3 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
SSM3K16CT(TPL3)

SSM3K16CT(TPL3)

MOSFET N-CH 20V 100MA CST3

Toshiba Semiconductor and Storage
3,910 -

RFQ

SSM3K16CT(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 3Ohm @ 10mA, 4V 1.1V @ 100µA - ±10V 9.3 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J66MFV,L3F

SSM3J66MFV,L3F

MOSFET P-CH 20V 800MA VESM

Toshiba Semiconductor and Storage
3,650 -

RFQ

SSM3J66MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.2V, 4.5V 390mOhm @ 800mA, 4.5V 1V @ 1mA 1.6 nC @ 4.5 V +6V, -8V 100 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
SSM3K15ACT(TPL3)

SSM3K15ACT(TPL3)

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage
2,568 -

RFQ

SSM3K15ACT(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J16FU(TE85L,F)

SSM3J16FU(TE85L,F)

SMALL LOW RON PCH MOSFETS VDSS:-

Toshiba Semiconductor and Storage
2,878 -

RFQ

SSM3J16FU(TE85L,F)

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 8Ohm @ 10mA, 4V 1.1V @ 100µA - ±10V 11 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
SSM5N15FE(TE85L,F)

SSM5N15FE(TE85L,F)

MOSFET N-CH 30V 100MA ESV

Toshiba Semiconductor and Storage
2,068 -

RFQ

SSM5N15FE(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM5N15FU,LF

SSM5N15FU,LF

MOSFET N-CH 30V 100MA USV

Toshiba Semiconductor and Storage
3,284 -

RFQ

SSM5N15FU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V - - ±20V 7.8 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM3J09FU,LF

SSM3J09FU,LF

MOSFET P-CH 30V 200MA USM

Toshiba Semiconductor and Storage
15,317 -

RFQ

SSM3J09FU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 3.3V, 10V 2.7Ohm @ 100mA, 10V 1.8V @ 100µA - ±20V 22 pF @ 5 V - 150mW (Ta) 150°C Surface Mount
SSM3K17SU,LF(D

SSM3K17SU,LF(D

MOSFET N-CH 50V 100MA USM

Toshiba Semiconductor and Storage
2,330 -

RFQ

Tape & Reel (TR) * Obsolete - - - 100mA (Ta) - - - - - - - - - -
SSM3J112TU,LF

SSM3J112TU,LF

MOSFET P-CH 30V 1.1A UFM

Toshiba Semiconductor and Storage
2,335 -

RFQ

SSM3J112TU,LF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4V, 10V 390mOhm @ 500mA, 10V 1.8V @ 100µA - ±20V 86 pF @ 15 V - 800mW (Ta) 150°C Surface Mount
SSM6J422TU,LF

SSM6J422TU,LF

MOSFET P-CH 20V 4A UF6

Toshiba Semiconductor and Storage
3,917 -

RFQ

SSM6J422TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 42.7mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM5H90ATU,LF

SSM5H90ATU,LF

MOSFET N-CH 20V 2.4A UFV

Toshiba Semiconductor and Storage
2,004 -

RFQ

SSM5H90ATU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.5V, 4V 65mOhm @ 1.5A, 4V 1.2V @ 1mA 2.2 nC @ 4 V ±10V 200 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3J118TU,LF

SSM3J118TU,LF

PB-F SMALL LOW ON RESISTANCE PCH

Toshiba Semiconductor and Storage
3,525 -

RFQ

SSM3J118TU,LF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V 2.6V @ 1mA - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
2SJ305TE85LF

2SJ305TE85LF

MOSFET P-CH 30V 200MA SC59

Toshiba Semiconductor and Storage
13,746 -

RFQ

2SJ305TE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 2.5V 4Ohm @ 50mA, 2.5V - - ±20V 92 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM6G18NU,LF

SSM6G18NU,LF

MOSFET P-CH 20V 2A 6UDFN

Toshiba Semiconductor and Storage
2,418 -

RFQ

SSM6G18NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 112mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 270 pF @ 10 V Schottky Diode (Isolated) 1W (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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