Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3K7002BF,LF

SSM3K7002BF,LF

MOSFET N-CH 60V 200MA SC59

Toshiba Semiconductor and Storage
3,444 -

RFQ

SSM3K7002BF,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 2.1Ohm @ 500mA, 10V - - ±20V 17 pF @ 25 V - 200mW (Ta) 150°C (TJ) Surface Mount
TPH1R306PL1,LQ

TPH1R306PL1,LQ

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Toshiba Semiconductor and Storage
2,347 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 1.34mOhm @ 50A, 10V 2.5V @ 1mA 91 nC @ 10 V ±20V 8100 pF @ 30 V - 960mW (Ta), 210W (Tc) 175°C Surface Mount
TK5R3E08QM,S1X

TK5R3E08QM,S1X

UMOS10 TO-220AB 80V 5.3MOHM

Toshiba Semiconductor and Storage
3,056 -

RFQ

TK5R3E08QM,S1X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 5.3mOhm @ 50A, 10V 3.5V @ 700µA 55 nC @ 10 V ±20V 3980 pF @ 40 V - 150W (Tc) 175°C Through Hole
T2N7002AK,LM

T2N7002AK,LM

MOSFET N-CH 60V 200MA SOT23

Toshiba Semiconductor and Storage
224,832 -

RFQ

T2N7002AK,LM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
T2N7002BK,LM

T2N7002BK,LM

MOSFET N-CH 60V 400MA SOT23-3

Toshiba Semiconductor and Storage
191,175 -

RFQ

T2N7002BK,LM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
SSM3K35CTC,L3F

SSM3K35CTC,L3F

MOSFET N-CH 20V 250MA CST3C

Toshiba Semiconductor and Storage
331,418 -

RFQ

SSM3K35CTC,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34 nC @ 4.5 V ±10V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K15AMFV,L3F

SSM3K15AMFV,L3F

MOSFET N-CH 30V 100MA VESM

Toshiba Semiconductor and Storage
2,533 -

RFQ

SSM3K15AMFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3K36MFV,L3F

SSM3K36MFV,L3F

MOSFET N-CH 20V 500MA VESM

Toshiba Semiconductor and Storage
100,536 -

RFQ

SSM3K36MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.5V, 5V 630mOhm @ 200mA, 5V 1V @ 1mA 1.23 nC @ 4 V ±10V 46 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
TK16C60W,S1VQ

TK16C60W,S1VQ

MOSFET N-CH 600V 15.8A I2PAK

Toshiba Semiconductor and Storage
3,521 -

RFQ

TK16C60W,S1VQ

Ficha técnica

Tube DTMOSIV Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK20C60W,S1VQ

TK20C60W,S1VQ

MOSFET N-CH 600V 20A I2PAK

Toshiba Semiconductor and Storage
2,142 -

RFQ

TK20C60W,S1VQ

Ficha técnica

Tube DTMOSIV Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
SSM3J56MFV,L3F

SSM3J56MFV,L3F

MOSFET P-CH 20V 800MA VESM

Toshiba Semiconductor and Storage
97,121 -

RFQ

SSM3J56MFV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.2V, 4.5V 390mOhm @ 800mA, 4.5V - - ±8V 100 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J332R,LF

SSM3J332R,LF

MOSFET P-CH 30V 6A SOT23F

Toshiba Semiconductor and Storage
100,039 -

RFQ

SSM3J332R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 10V 42mOhm @ 5A, 10V 1.2V @ 1mA 8.2 nC @ 4.5 V ±12V 560 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J328R,LF

SSM3J328R,LF

MOSFET P-CH 20V 6A SOT23F

Toshiba Semiconductor and Storage
17,507 -

RFQ

SSM3J328R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V ±8V 840 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPH11006NL,LQ

TPH11006NL,LQ

MOSFET N-CH 60V 17A 8SOP

Toshiba Semiconductor and Storage
17,945 -

RFQ

TPH11006NL,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4.5V, 10V 11.4mOhm @ 8.5A, 10V 2.5V @ 200µA 23 nC @ 10 V ±20V 2000 pF @ 30 V - 1.6W (Ta), 34W (Tc) 150°C (TJ) Surface Mount
SSM3K329R,LF

SSM3K329R,LF

MOSFET N CH 30V 3.5A 2-3Z1A

Toshiba Semiconductor and Storage
49,177 -

RFQ

SSM3K329R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 1.8V, 4V 126mOhm @ 1A, 4V 1V @ 1mA 1.5 nC @ 4 V ±12V 123 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J338R,LF

SSM3J338R,LF

MOSFET P-CH 12V 6A SOT23F

Toshiba Semiconductor and Storage
105,779 -

RFQ

SSM3J338R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 8V 17.6mOhm @ 6A, 8V 1V @ 1mA 19.5 nC @ 4.5 V ±10V 1400 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J133TU,LF

SSM3J133TU,LF

MOSFET P-CH 20V 5.5A UFM

Toshiba Semiconductor and Storage
129,982 -

RFQ

SSM3J133TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V ±8V 840 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6J501NU,LF

SSM6J501NU,LF

MOSFET P-CH 20V 10A 6UDFNB

Toshiba Semiconductor and Storage
2,272 -

RFQ

SSM6J501NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.5V, 4.5V 15.3mOhm @ 4A, 4.5V 1V @ 1mA 29.9 nC @ 4.5 V ±8V 2600 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J130TU,LF

SSM3J130TU,LF

MOSFET P-CH 20V 4.4A UFM

Toshiba Semiconductor and Storage
262,227 -

RFQ

SSM3J130TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.5V, 4.5V 25.8mOhm @ 4A, 4.5V 1V @ 1mA 24.8 nC @ 4.5 V ±8V 1800 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K2615R,LF

SSM3K2615R,LF

MOSFET N-CH 60V 2A SOT23F

Toshiba Semiconductor and Storage
52,353 -

RFQ

SSM3K2615R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSV Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 3.3V, 10V 300mOhm @ 1A, 10V 2V @ 1mA - ±20V 150 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
Total 1042 Record«Prev1... 2425262728293031...53Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario