Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
XPH2R106NC,L1XHQ

XPH2R106NC,L1XHQ

MOSFET N-CH 60V 110A 8SOP

Toshiba Semiconductor and Storage
2,303 -

RFQ

XPH2R106NC,L1XHQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Ta) - 2.1mOhm @ 55A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6900 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TPN2R503NC,L1Q

TPN2R503NC,L1Q

MOSFET N CH 30V 40A 8TSON-ADV

Toshiba Semiconductor and Storage
3,361 -

RFQ

TPN2R503NC,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2230 pF @ 15 V - 700mW (Ta), 35W (Tc) 150°C (TJ) Surface Mount
TK16J60W,S1VQ

TK16J60W,S1VQ

MOSFET N-CH 600V 15.8A TO3P

Toshiba Semiconductor and Storage
2,205 -

RFQ

TK16J60W,S1VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Through Hole
TK6R8A08QM,S4X

TK6R8A08QM,S4X

UMOS10 TO-220SIS 80V 6.8MOHM

Toshiba Semiconductor and Storage
3,155 -

RFQ

TK6R8A08QM,S4X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 58A (Tc) 6V, 10V 6.8mOhm @ 29A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 41W (Tc) 175°C Through Hole
TK8A10K3,S5Q

TK8A10K3,S5Q

MOSFET N-CH 100V 8A TO220SIS

Toshiba Semiconductor and Storage
2,817 -

RFQ

TK8A10K3,S5Q

Ficha técnica

Tube U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Ta) 10V 120mOhm @ 4A, 10V 4V @ 1mA 12.9 nC @ 10 V ±20V 530 pF @ 10 V - 18W (Tc) 150°C (TJ) Through Hole
2SK1829TE85LF

2SK1829TE85LF

MOSFET N-CH 20V 50MA SC70

Toshiba Semiconductor and Storage
3,584 -

RFQ

2SK1829TE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V - - 10V 5.5 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
2SK2034TE85LF

2SK2034TE85LF

MOSFET N-CH 20V 100MA SC70

Toshiba Semiconductor and Storage
3,469 -

RFQ

2SK2034TE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 2.5V 12Ohm @ 10mA, 2.5V - - 10V 8.5 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
HN4K03JUTE85LF

HN4K03JUTE85LF

MOSFET N-CH 20V 100MA USV

Toshiba Semiconductor and Storage
2,595 -

RFQ

HN4K03JUTE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 2.5V 12Ohm @ 10mA, 2.5V - - 10V 8.5 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM3J14TTE85LF

SSM3J14TTE85LF

MOSFET P-CH 30V 2.7A TSM

Toshiba Semiconductor and Storage
2,569 -

RFQ

SSM3J14TTE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSII Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4V, 10V 85mOhm @ 1.35A, 10V - - ±20V 413 pF @ 15 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM5N16FUTE85LF

SSM5N16FUTE85LF

MOSFET N-CH 20V 100MA USV

Toshiba Semiconductor and Storage
3,059 -

RFQ

SSM5N16FUTE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 3Ohm @ 10mA, 4V - - ±10V 9.3 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
2SK2035(T5L,F,T)

2SK2035(T5L,F,T)

MOSFET N-CH 20V 100MA SSM

Toshiba Semiconductor and Storage
3,586 -

RFQ

2SK2035(T5L,F,T)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 2.5V 12Ohm @ 10mA, 2.5V - - 10V 8.5 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J15CT(TPL3)

SSM3J15CT(TPL3)

MOSFET P-CH 30V 100MA CST3

Toshiba Semiconductor and Storage
2,756 -

RFQ

SSM3J15CT(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V - - ±20V 9.1 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J16CT(TPL3)

SSM3J16CT(TPL3)

MOSFET P-CH 20V 100MA CST3

Toshiba Semiconductor and Storage
3,022 -

RFQ

SSM3J16CT(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 8Ohm @ 10mA, 4V 1.1V @ 100µA - ±10V 11 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3J304T(TE85L,F)

SSM3J304T(TE85L,F)

MOSFET P-CH 20V 2.3A TSM

Toshiba Semiconductor and Storage
2,840 -

RFQ

SSM3J304T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 1.8V, 4V 127mOhm @ 1A, 4V - 6.1 nC @ 4 V ±8V 335 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3J306T(TE85L,F)

SSM3J306T(TE85L,F)

MOSFET P-CH 30V 2.4A TSM

Toshiba Semiconductor and Storage
3,136 -

RFQ

SSM3J306T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.4A (Ta) 4V, 10V 117mOhm @ 1A, 10V - 2.5 nC @ 15 V ±20V 280 pF @ 15 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K01T(TE85L,F)

SSM3K01T(TE85L,F)

MOSFET N-CH 30V 3.2A TSM

Toshiba Semiconductor and Storage
3,161 -

RFQ

SSM3K01T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 2.5V, 4V 120mOhm @ 1.6A, 4V - - ±10V 152 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SSM3K301T(TE85L,F)

SSM3K301T(TE85L,F)

MOSFET N-CH 20V 3.5A TSM

Toshiba Semiconductor and Storage
2,397 -

RFQ

SSM3K301T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.8V, 4V 56mOhm @ 2A, 4V - 4.8 nC @ 4 V ±12V 320 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K302T(TE85L,F)

SSM3K302T(TE85L,F)

MOSFET N-CH 30V 3A TSM

Toshiba Semiconductor and Storage
2,502 -

RFQ

SSM3K302T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 1.8V, 4V 71mOhm @ 2A, 4V - 4.3 nC @ 4 V ±12V 270 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K309T(TE85L,F)

SSM3K309T(TE85L,F)

MOSFET N-CH 20V 4.7A TSM

Toshiba Semiconductor and Storage
3,317 -

RFQ

SSM3K309T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4V 31mOhm @ 4A, 4V - - ±12V 1020 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K310T(TE85L,F)

SSM3K310T(TE85L,F)

MOSFET N-CH 20V 5A TSM

Toshiba Semiconductor and Storage
3,079 -

RFQ

SSM3K310T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.5V, 4V 28mOhm @ 4A, 4V - 14.8 nC @ 4 V ±10V 1120 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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