Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK50P04M1(T6RSS-Q)

TK50P04M1(T6RSS-Q)

MOSFET N-CH 40V 50A DP

Toshiba Semiconductor and Storage
2,613 -

RFQ

TK50P04M1(T6RSS-Q)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 4.5V, 10V 8.7mOhm @ 25A, 10V 2.3V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 10 V - 60W (Tc) 150°C (TJ) Surface Mount
TPCC8001-H(TE12LQM

TPCC8001-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage
2,146 -

RFQ

TPCC8001-H(TE12LQM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TK100A08N1,S4X

TK100A08N1,S4X

MOSFET N-CH 80V 100A TO220SIS

Toshiba Semiconductor and Storage
3,528 -

RFQ

TK100A08N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 45W (Tc) 150°C (TJ) Through Hole
TK25A60X,S5X

TK25A60X,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage
2,169 -

RFQ

TK25A60X,S5X

Ficha técnica

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TPCC8002-H(TE12LQM

TPCC8002-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage
2,892 -

RFQ

TPCC8002-H(TE12LQM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCC8003-H(TE12LQM

TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Toshiba Semiconductor and Storage
2,023 -

RFQ

TPCC8003-H(TE12LQM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 16.9mOhm @ 6.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1300 pF @ 10 V - 700mW (Ta), 22W (Tc) 150°C (TJ) Surface Mount
TPCC8005-H(TE12LQM

TPCC8005-H(TE12LQM

MOSFET N-CH 30V 26A 8TSON

Toshiba Semiconductor and Storage
3,436 -

RFQ

TPCC8005-H(TE12LQM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta) 4.5V, 10V 6.4mOhm @ 13A, 10V 2.3V @ 500µA 35 nC @ 10 V ±20V 2900 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage
3,113 -

RFQ

TPCC8006-H(TE12LQM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8mOhm @ 11A, 10V 2.3V @ 200µA 27 nC @ 10 V ±20V 2200 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C (TJ) Surface Mount
TPCC8008(TE12L,QM)

TPCC8008(TE12L,QM)

MOSFET N-CH 30V 25A 8TSON

Toshiba Semiconductor and Storage
3,257 -

RFQ

TPCC8008(TE12L,QM)

Ficha técnica

Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.8mOhm @ 12.5A, 10V 2.5V @ 1A 30 nC @ 10 V ±25V 1600 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCC8A01-H(TE12LQM

TPCC8A01-H(TE12LQM

MOSFET N-CH 30V 21A 8TSON

Toshiba Semiconductor and Storage
2,946 -

RFQ

TPCC8A01-H(TE12LQM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 9.9mOhm @ 10.5A, 10V 2.3V @ 1mA 20 nC @ 10 V ±20V 1900 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
TPCP8004(TE85L,F)

TPCP8004(TE85L,F)

MOSFET N-CH 30V 8.3A PS-8

Toshiba Semiconductor and Storage
2,960 -

RFQ

TPCP8004(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V, 10V 8.5mOhm @ 4.2A, 10V 2.5V @ 1mA 26 nC @ 10 V ±20V 1270 pF @ 10 V - 840mW (Ta) 150°C (TJ) Surface Mount
TPCP8103-H(TE85LFM

TPCP8103-H(TE85LFM

MOSFET P-CH 40V 4.8A PS-8

Toshiba Semiconductor and Storage
3,960 -

RFQ

TPCP8103-H(TE85LFM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII-H Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.8A (Ta) 4.5V, 10V 40mOhm @ 2.4A, 10V 2V @ 1mA 19 nC @ 10 V ±20V 800 pF @ 10 V - 840mW (Ta) 150°C (TJ) Surface Mount
SSM3J108TU(TE85L)

SSM3J108TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage
2,752 -

RFQ

SSM3J108TU(TE85L)

Ficha técnica

Tape & Reel (TR) U-MOSIII Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.8V, 4V 158mOhm @ 800mA, 4V 1V @ 1mA - ±8V 250 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
TK40P03M1(T6RSS-Q)

TK40P03M1(T6RSS-Q)

MOSFET N-CH 30V 40A DP

Toshiba Semiconductor and Storage
2,040 -

RFQ

TK40P03M1(T6RSS-Q)

Ficha técnica

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - Surface Mount
TK40P04M1(T6RSS-Q)

TK40P04M1(T6RSS-Q)

MOSFET N-CH 40V 40A DP

Toshiba Semiconductor and Storage
3,945 -

RFQ

TK40P04M1(T6RSS-Q)

Ficha técnica

Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 11mOhm @ 20A, 10V 2.3V @ 200µA 29 nC @ 10 V ±20V 1920 pF @ 10 V - 47W (Tc) 150°C (TJ) Surface Mount
TK4A60DA(STA4,Q,M)

TK4A60DA(STA4,Q,M)

MOSFET N-CH 600V 3.5A TO220SIS

Toshiba Semiconductor and Storage
3,603 -

RFQ

TK4A60DA(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) Through Hole
TK17N65W,S1F

TK17N65W,S1F

MOSFET N-CH 650V 17.3A TO247

Toshiba Semiconductor and Storage
2,592 -

RFQ

TK17N65W,S1F

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK31N60W,S1VF

TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247

Toshiba Semiconductor and Storage
3,118 -

RFQ

TK31N60W,S1VF

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK35N65W,S1F

TK35N65W,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage
3,081 -

RFQ

TK35N65W,S1F

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) Through Hole
SSM3K16FV,L3F

SSM3K16FV,L3F

PB-F VESM S-MOS (LF) TRANSISTOR

Toshiba Semiconductor and Storage
3,439 -

RFQ

SSM3K16FV,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.5V, 4V 3Ohm @ 10mA, 4V 1.1V @ 100µA - ±10V 9.3 pF @ 3 V - 150mW (Ta) 150°C Surface Mount
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