Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S22N10SM

RF1S22N10SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,853 -

RFQ

RF1S22N10SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 22A - - - - - - - - - Surface Mount
IPAN60R600P7SXKSA1

IPAN60R600P7SXKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies
450 -

RFQ

IPAN60R600P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) Through Hole
UPA1818GR-9JG-E1-A

UPA1818GR-9JG-E1-A

MOSFET P-CH 20V 10A 8TSSOP

Renesas Electronics America Inc
3,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) - 15.2mOhm @ 5A, 4.5V 1.5V @ 1mA 20 nC @ 4 V - 2200 pF @ 10 V - - - Surface Mount
2SK4080-ZK-E1-AY

2SK4080-ZK-E1-AY

MOSFET N-CH 30V 48A TO252

Renesas Electronics America Inc
2,500 -

RFQ

2SK4080-ZK-E1-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) - 9mOhm @ 24A, 10V 2.5V @ 1mA 32 nC @ 12 V - 1670 pF @ 10 V - 1W (Ta), 29W (Tc) 150°C (TJ) Surface Mount
RFP45N06

RFP45N06

MOSFET N-CH 60V 45A TO220-3

Fairchild Semiconductor
2,045 -

RFQ

RFP45N06

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 28mOhm @ 45A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2050 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7446GPBF

IRFB7446GPBF

IRFB7446 - POWER MOSFET

International Rectifier
1,157 -

RFQ

IRFB7446GPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) - Through Hole
IPP60R520CP

IPP60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPP60R520CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFZ44NSTRRPBF

IRFZ44NSTRRPBF

HEXFET POWER MOSFET

International Rectifier
450 -

RFQ

IRFZ44NSTRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PH2230DLS115

PH2230DLS115

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
7,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDD2512

FDD2512

MOSFET N-CH 150V 6.7A TO252

Fairchild Semiconductor
9,940 -

RFQ

FDD2512

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 6.7A (Ta) 6V, 10V 420mOhm @ 2.2A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 344 pF @ 75 V - 42W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BSC029N025SG

BSC029N025SG

N-CHANNEL POWER MOSFET

Infineon Technologies
8,868 -

RFQ

BSC029N025SG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.9mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5090 pF @ 15 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB4020P

FDB4020P

MOSFET P-CH 20V 16A TO263AB

Fairchild Semiconductor
7,121 -

RFQ

FDB4020P

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.5V, 4.5V 80mOhm @ 8A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 665 pF @ 10 V - 37.5W (Tc) -65°C ~ 175°C (TJ) Surface Mount
UPA2800T1L-E1-AY

UPA2800T1L-E1-AY

MOSFET N-CH 30V 17A 8DFN

Renesas Electronics America Inc
6,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) - 7.3mOhm @ 17A, 10V 2.5V @ 1mA 17 nC @ 5 V - 1770 pF @ 15 V - - - Surface Mount
2SK2054(0)T1-AZ

2SK2054(0)T1-AZ

N-CHANNEL MOSFET

Renesas Electronics America Inc
5,800 -

RFQ

2SK2054(0)T1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF720PBF-BE3

IRF720PBF-BE3

MOSFET N-CH 400V 3.3A TO220AB

Vishay Siliconix
868 -

RFQ

IRF720PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) - 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z14PBF-BE3

IRF9Z14PBF-BE3

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
445 -

RFQ

IRF9Z14PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP6035L

FDP6035L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,250 -

RFQ

FDP6035L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 11mOhm @ 26A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1230 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Through Hole
ISL9N308AP3

ISL9N308AP3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,200 -

RFQ

ISL9N308AP3

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8Ohm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2624LS-CD11

2SK2624LS-CD11

N-CHANNEL SILICON MOSFET

onsemi
2,500 -

RFQ

2SK2624LS-CD11

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
ISL9N308AS3ST

ISL9N308AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,400 -

RFQ

ISL9N308AS3ST

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8Ohm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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