Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL520NS

IRL520NS

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,138 -

RFQ

IRL520NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520NSTRL

IRL520NSTRL

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,471 -

RFQ

IRL520NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NL

IRL530NL

MOSFET N-CH 100V 17A TO262

Infineon Technologies
3,941 -

RFQ

IRL530NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL530NSTRL

IRL530NSTRL

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,294 -

RFQ

IRL530NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NSTRR

IRL530NSTRR

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
3,646 -

RFQ

IRL530NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-3316

94-3316

MOSFET N-CH 55V 2A SOT223

Infineon Technologies
2,227 -

RFQ

94-3316

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) - 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V - 230 pF @ 25 V - - - Surface Mount
IRLL014NTR

IRLL014NTR

MOSFET N-CH 55V 2A SOT223

Infineon Technologies
2,902 -

RFQ

IRLL014NTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) 4V, 10V 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V ±16V 230 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR3103TR

IRLR3103TR

MOSFET N-CH 30V 55A DPAK

Infineon Technologies
2,583 -

RFQ

IRLR3103TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3303TR

IRLR3303TR

MOSFET N-CH 30V 35A DPAK

Infineon Technologies
3,516 -

RFQ

IRLR3303TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU024N

IRLU024N

MOSFET N-CH 55V 17A I-PAK

Infineon Technologies
2,602 -

RFQ

IRLU024N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU2703

IRLU2703

MOSFET N-CH 30V 23A I-PAK

Infineon Technologies
3,518 -

RFQ

IRLU2703

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Tc) 4.5V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3303

IRLU3303

MOSFET N-CH 30V 35A I-PAK

Infineon Technologies
3,784 -

RFQ

IRLU3303

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24NS

IRLZ24NS

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,294 -

RFQ

IRLZ24NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34NS

IRLZ34NS

MOSFET N-CH 55V 30A D2PAK

Infineon Technologies
3,035 -

RFQ

IRLZ34NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44NSTRR

IRLZ44NSTRR

MOSFET N-CH 55V 47A D2PAK

Infineon Technologies
3,364 -

RFQ

IRLZ44NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 4V, 10V 22mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3443DVTR

SI3443DVTR

MOSFET P-CH 20V 4.4A 6-TSOP

Infineon Technologies
2,199 -

RFQ

SI3443DVTR

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) - 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V - 1079 pF @ 10 V - - - Surface Mount
SI4410DY

SI4410DY

MOSFET N-CH 30V 10A 8SO

Infineon Technologies
3,186 -

RFQ

SI4410DY

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 1V @ 250µA 45 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4435DYTR

SI4435DYTR

MOSFET P-CH 30V 8A 8SO

Infineon Technologies
3,333 -

RFQ

SI4435DYTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4435DY

SI4435DY

MOSFET P-CH 30V 8A 8SO

Infineon Technologies
3,108 -

RFQ

SI4435DY

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL4105

IRFL4105

MOSFET N-CH 55V 3.7A SOT223

Infineon Technologies
2,169 -

RFQ

IRFL4105

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.7A (Ta) 10V 45mOhm @ 3.7A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 660 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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