Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP126N10N3G

IPP126N10N3G

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies
3,735 -

RFQ

IPP126N10N3G

Ficha técnica

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) - 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
SP001434884

SP001434884

IPN60R1K0CEATMA1 - MOSFET

Infineon Technologies
3,439 -

RFQ

SP001434884

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP80N06S2-09

IPP80N06S2-09

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,740 -

RFQ

IPP80N06S2-09

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD03N60C3

SPD03N60C3

MOSFET N-CH 600V 3.2A TO252

Infineon Technologies
3,465 -

RFQ

SPD03N60C3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) - 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP08N80C3

SPP08N80C3

SPP08N80 - 800V COOLMOS N-CHANNE

Infineon Technologies
2,976 -

RFQ

SPP08N80C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SP001461194

SP001461194

IPN50R2K0CEATMA1 - MOSFET

Infineon Technologies
3,952 -

RFQ

SP001461194

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ST194E6716HTSA1

ST194E6716HTSA1

ST194 - SILICON N-CHANNEL MOSFET

Infineon Technologies
2,106 -

RFQ

ST194E6716HTSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFN8401TR

AUIRFN8401TR

AUIRFN8401 - 20V-40V N-CHANNEL A

Infineon Technologies
3,804 -

RFQ

AUIRFN8401TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP20N65C3XKSA1

SPP20N65C3XKSA1

HIGH POWER_LEGACY

Infineon Technologies
3,989 -

RFQ

SPP20N65C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB407N30NATMA1

IPB407N30NATMA1

TRENCH >=100V

Infineon Technologies
3,396 -

RFQ

IPB407N30NATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) 10V 40.7mOhm @ 44A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7180 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R600C6XKSA1

IPI65R600C6XKSA1

IPI65R600 - 650V AND 700V COOLMO

Infineon Technologies
2,439 -

RFQ

IPI65R600C6XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL65R650C6SE8211ATMA1

IPL65R650C6SE8211ATMA1

IPL65R650 - 650V AND 700V COOLMO

Infineon Technologies
3,853 -

RFQ

IPL65R650C6SE8211ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLR3717TRRPBF

IRLR3717TRRPBF

TRENCH <= 40V

Infineon Technologies
3,392 -

RFQ

IRLR3717TRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.45V @ 250µA 31 nC @ 4.5 V ±20V 2830 pF @ 10 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR1010Z

AUIRFR1010Z

AUIRFR1010 - 55V-60V N-CHANNEL A

Infineon Technologies
2,879 -

RFQ

AUIRFR1010Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44VZSPBF

IRFZ44VZSPBF

IRFZ44 - TRENCH 40<-<100V

Infineon Technologies
3,089 -

RFQ

IRFZ44VZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

IPD60R1K4 - LOW POWER_LEGACY

Infineon Technologies
2,805 -

RFQ

IPD60R1K4C6ATMA1

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3806TRL

AUIRFS3806TRL

MOSFET_)40V,60V)

Infineon Technologies
3,061 -

RFQ

AUIRFS3806TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,706 -

RFQ

AUIRF2804S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R280CEXKSA1

IPP50R280CEXKSA1

CONSUMER

Infineon Technologies
3,111 -

RFQ

IPP50R280CEXKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB38N20DPBF

IRFB38N20DPBF

IRFB38N20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,558 -

RFQ

IRFB38N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 398399400401402403404405...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario