Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R190C6

IPA60R190C6

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
2,714 -

RFQ

IPA60R190C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB108N15N3G

IPB108N15N3G

IPB108N15 - 12V-300V N-CHANNEL P

Infineon Technologies
2,163 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPW60R160C6

IPW60R160C6

23.8A, 600V, 0.16OHM, N-CHANNEL

Infineon Technologies
2,211 -

RFQ

IPW60R160C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SP000687556

SP000687556

IPP60R099C6XKSA1 - COOLMOS N-CHA

Infineon Technologies
3,057 -

RFQ

SP000687556

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP50R199CP

IPP50R199CP

IPP50R199 - 500V COOLMOS N-CHANN

Infineon Technologies
2,163 -

RFQ

IPP50R199CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R380C6

IPP65R380C6

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
3,581 -

RFQ

IPP65R380C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB080N06N G

IPB080N06N G

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies
3,843 -

RFQ

IPB080N06N G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 150µA 93 nC @ 10 V ±20V 3500 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP000660618

SP000660618

IPI60R190C6XKSA1 - COOLMOS N-CHA

Infineon Technologies
2,473 -

RFQ

SP000660618

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD75N04S4-06

IPD75N04S4-06

IPD75N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
3,183 -

RFQ

IPD75N04S4-06

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.9mOhm @ 75A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ050N03MSG

BSZ050N03MSG

BSZ050N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,697 -

RFQ

BSZ050N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SP000850810

SP000850810

IPP50R280CEXKSA1 - 500V COOLMOS

Infineon Technologies
3,479 -

RFQ

SP000850810

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB18P06PG

SPB18P06PG

SPB18P06 - 20V-250V P-CHANNEL PO

Infineon Technologies
2,952 -

RFQ

SPB18P06PG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA60R125CP

IPA60R125CP

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
2,386 -

RFQ

IPA60R125CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA65R280C6

IPA65R280C6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies
3,650 -

RFQ

IPA65R280C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80R1K4P7

IPP80R1K4P7

IPP80R1K4 - 800V COOLMOS N-CHANN

Infineon Technologies
2,517 -

RFQ

IPP80R1K4P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R280C6

IPP65R280C6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies
2,669 -

RFQ

IPP65R280C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80R900P7

IPP80R900P7

IPP80R900 - 800V COOLMOS N-CHANN

Infineon Technologies
2,213 -

RFQ

IPP80R900P7

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
IPB180N03S4L-01

IPB180N03S4L-01

IPB180N03 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,056 -

RFQ

IPB180N03S4L-01

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R099C7

IPW60R099C7

MOSFET N-CH 600V 22A TO247

Infineon Technologies
2,051 -

RFQ

IPW60R099C7

Ficha técnica

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R199CP

IPW60R199CP

16A, 600V, 0.199OHM, N-CHANNEL M

Infineon Technologies
2,324 -

RFQ

IPW60R199CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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