Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R125P6

IPA60R125P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
2,380 -

RFQ

IPA60R125P6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPN50R3K0CE

IPN50R3K0CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
3,357 -

RFQ

IPN50R3K0CE

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP60R060P7

IPP60R060P7

600V, 0.06OHM, N-CHANNEL MOSFET

Infineon Technologies
2,526 -

RFQ

IPP60R060P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
IPA057N08N3G

IPA057N08N3G

IPA057N08 - 12V-300V N-CHANNEL P

Infineon Technologies
3,695 -

RFQ

IPA057N08N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPN80R2K0P7

IPN80R2K0P7

IPN80R2K0 - 800V COOLMOS N-CHANN

Infineon Technologies
2,010 -

RFQ

IPN80R2K0P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW65R045C7

IPW65R045C7

46A, 650V, 0.045OHM, N-CHANNEL M

Infineon Technologies
2,592 -

RFQ

IPW65R045C7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80R750P7

IPP80R750P7

IPP80R750 - 800V COOLMOS N-CHANN

Infineon Technologies
3,582 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IPP045N10N3G

IPP045N10N3G

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
2,686 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP60R165CP

IPP60R165CP

21A, 600V, 0.165OHM, N-CHANNEL M

Infineon Technologies
3,913 -

RFQ

IPP60R165CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSZ050N03LSG

BSZ050N03LSG

BSZ050N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,493 -

RFQ

BSZ050N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80N06S2-H5

IPP80N06S2-H5

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,086 -

RFQ

IPP80N06S2-H5

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7787PBF

IRFSL7787PBF

IRFSL7787 - 12V-300V N-CHANNEL P

Infineon Technologies
3,909 -

RFQ

IRFSL7787PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) - 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R600E6

IPA65R600E6

IPA65R600 - 650V AND 700V COOLMO

Infineon Technologies
2,486 -

RFQ

IPA65R600E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SP000797380

SP000797380

IPA60R190E6XKSA1 - POWER FIELD-E

Infineon Technologies
2,440 -

RFQ

SP000797380

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD14N06S2-80

IPD14N06S2-80

IPD14N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,601 -

RFQ

IPD14N06S2-80

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 80mOhm @ 7A, 10V 4V @ 14µA 10 nC @ 10 V ±20V 293 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R099CPA

IPW60R099CPA

IPW60R099 - 600V-800V N-CHANNEL

Infineon Technologies
3,695 -

RFQ

IPW60R099CPA

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R125CP

IPW60R125CP

25A, 600V, 0.125OHM, N-CHANNEL M

Infineon Technologies
3,161 -

RFQ

IPW60R125CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD060N03LG

IPD060N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,778 -

RFQ

IPD060N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI60R125CP

IPI60R125CP

25A, 600V, 0.125OHM, N-CHANNEL M

Infineon Technologies
3,335 -

RFQ

IPI60R125CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPN50R950CE

IPN50R950CE

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,628 -

RFQ

IPN50R950CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 395396397398399400401402...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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